Organic semiconductor single crystal

Organic semiconductor single crystal, Total:85 items.

The international standard classification for "Organic semiconductor single crystal" includes: Semiconducting materials , Testing of metals , Thyristors , Semiconductor devices in general .

The Chinese standard classification for "Organic semiconductor single crystal" includes: Metal physical property test method , Semimetal and semiconductor material in general , Semimetal and semiconductor material analysis method , Power semiconductor device and parts , Semiconductor discrete devices in general , Special electronic technology material .

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General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

• GB/T 46227-2025 Test method for transmittance of semiconductor single crystal materials
• GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal
• GB/T 42676-2023 Test method for crystalline quality of semiconductive single crystal―X-ray diffraction method
• GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal
• GB/T 14140-2025 Test method for measuring diameter of semiconductor wafer
• GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal
• GB/T 45719-2025 Semiconductor devices—Hot carrier test on metal-oxide semiconductor(MOS) transistors
• GB/T 15291-1994 Semiconductor devices Part 6 Thyristors

Group Standards of the People's Republic of China

• T/CASME 1853-2024 Laser Cutting Machine for Semiconductor Wafer Processing
• T/CEMIA 024-2021 Quartz crucible manufacturing practices for semiconductor monosilicon growth
• T/QGCML 4031-2024 Semiconductor optical wafer
• T/ZZB 2283-2021 Ultra-high purity graphite powder for semiconductor silicon carbide crystal
• T/NXCL 28-2024 Synthetic quartz crucible for semiconductor grade monocrystalline silicon growth
• T/CEMIA 023-2021 Quartz crucible for semiconductor monosilicon growth
• T/ICMTIA CM0038-2024 High purity quartz crucible for semiconductor silicon single crystal production
• T/SZBSIA 006-2022 Semiconductor di e bonder technical?norm
• T/SZBSIA 007-2022 Semiconductor die bonder test specification
• T/CIET 765-2024 Thermally conductive silicone gel for semiconductor chip packaging

Military Standard of the People's Republic of China-General Armament Department

• GJB 33/11-1989 Detailed specifications for semiconductor discrete devices BT37 type PN silicon single-junction transistor
• GJB 33/9-1989 Detailed specifications for semiconductor discrete devices BT32 type PN silicon single-junction transistor
• GJB 33/16-2011 Semiconductor optoelectronic device.Detail specification for type 3DU32 semiconductor phototransistor
• GJB 33/10-1989 Detailed specifications for semiconductor discrete devices BT33 type PN silicon single-junction transistor

Professional Standard - Machinery

• JB/T 6307.5-1994 Power Semiconductor Module Test Methods Bipolar Transistors Single-Phase Bridge and Three-Phase Bridge

Defense Logistics Agency

• DLA MIL-S-19500/425 VALID NOTICE 3-2011 Semiconductor Device, Transistor, PN, Silicon, Unijunction JAN2N5431, and JANTX2N5431
• DLA MIL-S-19500/425 VALID NOTICE 2-2004 SEMICONDUCTOR DEVICE, TRANSISTOR, PN, SILICON, UNIJUNCTION JAN2N5431, AND JANTX2N5431
• DLA MIL-S-19500/529 VALID NOTICE 4-2011 Semiconductor Device, Transistor, Silicon Type 2N3904
• DLA MIL-S-19500/216 A VALID NOTICE 3-2004 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON TYPE 2N1051
• DLA MIL-S-19500/273 A VALID NOTICE 3-2011 Semiconductor Device, Transistor Type Type 2N744
• DLA MIL-S-19500/303 VALID NOTICE 3-2011 Semiconductor Device, Transistor, Types 2N2631 and 2N2876
• DLA MIL-PRF-19500/75 B NOTICE 1-1999 SEMICONDUCTOR DEVICE, TRANSISTORS, PN, SILICON UNIJUNCTION TYPES 2N2417A THROUGH 2N2422A, AND TX2N2417A THROUGH TX2N2422A
• DLA SMD-5962-95762-1995 MICROCIRCUIT, DIGITAL, FAST CMOS, BUFFER/CLOCK DRIVER WITH INVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS AND LIMITED OUTPUT VOLTAGE SWING, MONOLITHIC SILICON
• DLA SMD-5962-96665 REV D-2005 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, HEX VOLTAGE LEVEL SHIFTER FOR TTL-TO-CMOS OR CMOS-TO- CMOS OPERATION, MONOLITHIC SILICON
• DLA MIL-S-19500/388 B VALID NOTICE 3-2011 Semiconductor Device, Transistor, PN, Silicon, Unijunction Types 2N4947, 2N4948 and 2N4949 JAN, JANTX, JANTX , and JANS
• DLA MIL-S-19500/40 B VALID NOTICE 3-2011 Semiconductor, Transistor, NPN, Germanium, Power Type 2N326
• DLA MIL-S-19500/170 A VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium Type 2N1499A
• DLA MIL-S-19500/216 A VALID NOTICE 4-2011 Semiconductor Device, Transistor, NPN, Silicon Type 2N1051
• DLA MIL-S-19500/288 VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Silicon Type 2N2377
• DLA MIL-PRF-19500/139 B NOTICE 2-1999 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON TYPE JAN-2N1119
• DLA MIL-S-19500/288 (2)-1966 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON TYPE 2N2377
• DLA MIL-S-19500/179 A VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Silicon Type 2N1234
• DLA MIL-PRF-19500/210 B NOTICE 1-1999 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, PHOTO TYPE 2N986
• DLA MIL-S-19500/215 VALID NOTICE 3-2011 Semiconductor Device, Transistor, Types 2N1173 and 2N1174 (Navy)
• DLA SMD-5962-88770 REV H-2003 MICROCIRCUIT, LINEAR, SINGLE POWER MOSFET DRIVER, MONOLITHIC SILICON
• DLA MIL-S-19500/173 A VALID NOTICE 3-2011 Semiconductor Device, Transistor, Types 2N389 and 2N424 (Navy)

Military Standards (MIL-STD)

• MIL MIL-S-19500/425-1969 SEMICONDUCTOR DEVICE, TRANSISTOR, PN, SILICON, UNIJUNCTION JAN2N5431, AND JANTX2N5431
• MIL MIL-S-19500/530-1979 SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3906
• MIL MIL-S-19500/529-1978 SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3904
• MIL MIL-PRF-19500/495H-2015 Semiconductor Device, Unitized, Dual-Transistor, NPN, Silicon Types 2N5793, 2N5794, JAN, JANTX, JANTXV, JANS.
• MIL MIL-S-19500/288-1964 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON TYPE 2N2377
• MIL MIL-S-19500/289-1964 Semiconductor Device, Transistor, PNP, Silicon Type 2N2378
• MIL MIL-PRF-19500/495G-2010 Semiconductor Device, Unitized, Dual-Transistor, NPN, Silicon Types 2N5793, 2N5794, JAN, JANTX, JANTXV, JANS.
• MIL MIL-PRF-19500/495F-2009 Semiconductor Device, Unitized, Dual-Transistor, NPN, Silicon Types 2N5793, 2N5794, JAN, JANTX, JANTXV, JANS.
• MIL MIL-S-19500/303-1964 Semiconductor Device, Transistor, Types 2N2631 and 2N2876

Bureau of Indian Standards

• IS 3895-1966 Specification for monocrystalline semiconductor rectifier cells and stacks
• IS 4540-1968 Specification for monocrystalline semiconductor rectifier components and equipment

International Electrotechnical Commission (IEC)

• IEC 60146:1963 Monocrystalline semiconductor rectifier cells, stacks, assemblies and equipments
• IEC 60146:1963/COR1:1965 Corrigendum 1 - Monocrystalline semiconductor rectifier cells, stacks, assemblies and equipments
• IEC 60747-6:2016 Semiconductor devices - Part 6: Thyristors

National Standardisation Body (ASRO)

• STAS 7128/9-1980 SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS Letter symbols for unijonction transistors
• STAS 11418-1980 Semiconductor devices UNIJUNCTION TRANSISTORS Terminology

American Society for Testing and Materials (ASTM)

• ASTM F26-87a(1999) Standard Test Methods for Determining the Orientation of a Semiconductive Single Crystal

German Institute for Standardization

• DIN 50442-1:1981 Testing of semi-conductive inorganic materials; determination of the surface structure of circular monocrystalline semi-conductive slices; as-cut and lapped slices
• DIN 50433-2:1976 Testing of semi-conducting inorganic materials; determining the orientation of single crystals by means of optical reflection figure
• DIN 50443-1:1988 Testing of materials for use in semiconductor technology; detection of crystal defects and inhomogeneities in silicon single crystals by X-ray topography
• DIN VDE 0556:1966 Regulations for polycrystal semiconductor-rectifiers
• DIN IEC 747-11:1992 Semiconductor devices; Sectional specification for semiconductor devices
• DIN VDE 0556:1966-10 Regulations for polycrystal semiconductor-rectifiers

European Committee for Electrotechnical Standardization（CENELEC）

• EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

Czech Standards Institute (UNMZ)

• CSN 35 8754-1973 Semiconductor devices. Transistors. Measurement of short-circuit output admittance
• CSN 35 8740-1973 Semiconduotor deviees. Transistore. Measurement of saturation voltage
• CSN 35 8756-1973 Semiconductor devices. Transistors Measurement of y-parameters

Yugoslav Association for Standardization

• JUS N.R1.352-1979 Letter symbohfor semkonductor devices. Thyristors.

Association Francaise de Normalisation

• NF C96-822:1981 Semiconductor Devices High Power Thyristors
• NF C96-611/A1:1972 Semiconductors Junction transistors Particular Standard Sheets

Association for Electrical, Electronic & Information Technologies (VDE)

• VDE 0556-1966*DIN VDE 0556:1966 Regulations for polycrystalline semiconductor rectifiers

Korean Agency for Technology and Standards (KATS)

• KS C IEC 60119-2014(2024) Recommendations for polycrystalline semiconductor rectifier stacks and equipments
• KS C IEC 60119-2014(2019) Recommendations for polycrystalline semiconductor rectifier stacks and equipments
• KS C IEC 60747-6:2006 Semiconductor Devices － Discrete devices － Part 6: Thyristors
• KS C IEC 60747-7:2006 Semiconductor devices － Discrete devices － Part 7: Bipolar transistors

British Standards Institution (BSI)

• BS EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
• BS IEC 60747-7:2010 Semiconductor devices. Discrete devices. Bipolar transistors
• BS IEC 60747-7:2011 Semiconductor devices. Discrete devices. Bipolar transistors
• BS IEC 62951-9:2022 Semiconductor devices. Flexible and stretchable semiconductor devices - Performance testing methods of one transistor and one resistor (1T1R) resistive memory cells
• BS IEC 60747-7:2010+A1:2019 Semiconductor devices. Discrete devices - Bipolar transistors

Polski Komitet Normalizacyjny (PKN)

• PN T01208-03-1992 Semiconductor devices Bipolar transistors Measuring methods

Others: Organic Semiconductor Photocatalysis,Organic Semiconductor Materials,Organic Semiconductor Micro,Measuring resistivity, Hall coefficient and Hall of single crystal semiconductor.,Photocatalysis of Organic Semiconductor Materials,Organic semiconductor single crystal,Test Method for Measuring Resistivity, Hall Coefficient and Hall Mobility of Single Crystal Semiconductors,Measuring method of Hall mobility and Hall coefficient of extrinsic semiconductor single crystal,Properties of Organic Semiconductor Materials,organic semiconductor x-ray,Organic semiconductors are unstable,Semiconductor single crystal,Organic semiconductors are unstable,Absorption Spectra of Organic Semiconductors,organic semiconductor laser,organic single crystal semiconductor,Organic semiconductor single crystal,Extrinsic Semiconductor Single Crystal Hall Mobility and Hall Coefficient Measurements