Molybdenum ditelluride-a new semiconductor material

Molybdenum ditelluride-a new semiconductor material, Total:74 items.

The international standard classification for "Molybdenum ditelluride-a new semiconductor material" includes: Testing of metals , Testing of metals in general , Semiconducting materials , Software development and system documentation , Mechanical structures for electronic equipment , Mineral materials and products , Capacitors .

The Chinese standard classification for "Molybdenum ditelluride-a new semiconductor material" includes: Metal physical property test method , Semimetal and semiconductor material in general , Special electronic technology material , Software engineering , Wall , Technical management , Microwave and millimeter wave diode and triode , Technical management .

Group Standards of the People's Republic of China

T/CIET 723-2024 Technical Specifications for Semiconductor CMP Polishing Materials
T/SHDSGY 135-2023 New Energy Semiconductor Silicon Wafer Material Technology
T/CASME 798-2023 Specialized processing tools for semiconductor materials

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials
GB/T 14844-1993 of semiconductor materials
GB/T 14264-1993 Semiconductor materials－Terms and definitions
GB/T 7423.2-1987 Heat sink of semiconductor devices--Heat sink, Extruded shapes
GB/T 36646-2018 Software component management—Management information model
GB/T 14264-2024 Terminology of semiconductor materials
SPC GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials (TEXT OF DOCUMENT IS IN CHINESE)
GB/T 14844-2018 Designations of semiconductor materials
GB/T 31469-2015 Semiconductor materials cutting fluid
GB/T 42529-2023 Evaluation requirements for moisture conduction and phase change respiratory function of new wall materials
GB/T 14264-2009 Semiconductor materials - Terms and definitions
GB/T 1550-1997 methods for measuring conductivity type of extrinsic semiconducting materials
GB/T 4298-1984 The activation analysis method for the determination of elemental impurities in semiconductor silicon materials
GB 7423.2-1987 sink of semiconductor devices - Heat sink, Extruded shapes

Professional Standard - Electron

SJ 50033/141-1999 Semiconductor discrete devices-Detail specification for Type 2EK150 GaAs high speed switching diode
SJ 50033/109-1996 Semiconductor optoelectronic devices - Detail specification for Types GJ903T and GJ9032T and GJ9034T semiconductor laser diodes
SJ/T 11775-2021 Multi-wire saw used for semiconductor materials
SJ 910-1974 Detail specification for silicon voltage regulator diodes,Type 3DW50~202
SJ 50033/4-1994 Semiconductor discrete device-Detail specification for semiconductor red light emitting diodes for type GF111 of GP and GT classes
SJ 909-1974 Detail specification for silicon voltage regulator diodes,Type 2CW50~149
SJ/T 10746-1996 Procedures and rules for pattern evaluation of new products for semiconductor integrated circuits
SJ 50033/6-1994 Semiconductor discrete device-Detail specification for semiconductor green light emitting diodes for type GF411 of GP and GT classes
SJ 50033/118-1997 Semiconductor discrete devices-Detail specification for Type 2EK31 GaAs switch diode
SJ/T 11401-2009 Series program for semiconductor light emitting diodes
SJ 2218-1982 Semiconductor photocouplers in the diode mode
SJ 50033/41-1994 Detail specification for type GR9414 semiconductor infrared light emitting diode
SJ 50033/5-1994 Semiconductor discrete device-Detail specification for semiconductor yellow light emitting diodes for type GF311 of GP and GT classes

Military Standard of the People's Republic of China-General Armament Department

GJB 33/15-2011 Semiconductor optoelectronic device.Detail specification for type BT401 semiconductor infrared-emitting diode

Shaanxi Provincial Standard of the People's Republic of China

DB61/T 1250-2019 General Specification for Sic (Silicon Carbide) Material Semiconductor Discrete Devices

American Society for Testing and Materials (ASTM)

ASTM F42-02 Test methods for conductivity types of semiconductor materials
ASTM F43-99 Semiconductor material resistivity test method

GM Holden Ltd

HOLDEN HN 1587-2012 Molybdenum Disulphide Grease - Clay Thickened Material

Military Standards (MIL-STD)

MIL MIL-S-19500/352-1966 SEMICONDUCTOR DEVICE, DIODE, SILICON TYPE 1N831A
MIL MIL-S-19500/298-1964 SEMICONDUCTOR DEVICE, DIODE, SILICON TYPE 1N1742A
MIL MIL-S-19500/227-1962 SEMICONDUCTOR DEVICE, DIODE, TYPE 1N995M (NAVY)
MIL MIL-S-19500/229-1962 SEMICONDUCTOR DEVICE, DIODE, TYPE 1N830AM (NAVY)
MIL MIL-S-19500/460-1971 SEMICONDUCTOR DEVICE, DIODE, GALLIUM ARSENIDE, MIXER TYPE IN5764, 1N5764M AND 1N5764MR
MIL MIL-S-19500/364-1966 SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, MIXER TYPE IN1838
MIL MIL-S-19500/467-1972 SEMICONDUCTOR DEVICE, DIODE, LIGHT EMITTING TYPES JANIN5765 AND JANTX1N5765
MIL MIL-PRF-19500/467A-2008 Semiconductor Device, Diode, Light Emitting Types IN5765 JAN and TX
MIL MIL-PRF-19500/467B-2016 Semiconductor Device, Diode, Light Emitting Type 1N5765 JAN and JANTX
MIL MIL-PRF-19500/467C-2017 Semiconductor Device, Diode, Light Emitting Type 1N5765 JAN and JANTX
MIL MIL-S-19500/403-1968 SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPE 1N4500, JAN AND JANTX

Defense Logistics Agency

DLA MIL-S-19500/236 A VALID NOTICE 3-2011 Semiconductor Device, Diode, Silicon Type 1N31
DLA MIL-S-19500/298 VALID NOTICE 4-2011 Semiconductor Device, Diode, Silicon Type 1N1742A
DLA MIL-PRF-19500/187 B (1)-2012 SEMICONDUCTOR DIODE, DILICON, HIGH-VOLTAGE TYPE JAN1N2361
DLA MIL-S-19500/229 VALID NOTICE 3-2011 Semiconductor Device, Diode, Type 1N830AM (Navy)
DLA MIL-S-19500/227 VALID NOTICE 3-2011 Semiconductor Device, Diode, Type 1N995M (Navy)
DLA MIL-S-19500/230 C VALID NOTICE 4-2011 Semiconductor Device, Diode, Silicon, High-Conductance Type JAN- 1N3207
DLA MIL-S-19500/191 A (1)-1971 SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, MIXER TYPE 1N263
DLA SMD-5962-93007 REV D-1996 MICROCIRCUIT, DIGITAL, CMOS, TWO DIMENSIONAL CONVOLVER MONOLITHIC SILICON
DLA MIL-S-19500/200 B VALID NOTICE 3-2011 Semiconductor Device, Diode, Germanium Type 1N270 JAN, JANTX, and JANTXV
DLA MIL-PRF-19500/467 A-2008 SEMICONDUCTOR DEVICE, DIODE, LIGHT EMITTING, TYPE 1N5765 JAN AND TX
DLA MIL-S-19500/254 B VALID NOTICE 1-2011 Semiconductor Device, Diode, Silicon, Types 1N1147 and 1N1149, JAN
DLA MIL-PRF-19500/256 C NOTICE 2-1999 SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N643, 1N662 AND 1N663
DLA MIL-S-19500/201 B VALID NOTICE 3-2011 Semiconductor Device, Diode, Germanium Type 1N277 JAN, JANTX, and JANTXV
DLA SMD-5962-77058 REV G-2005 MICROCIRCUIT, DIGITAL, CMOS, 12-BIT BINARY COUNTER, MONOLITHIC SILICON
DLA SMD-5962-85016 REV D-2007 MICROCIRCUIT, DIGITAL, CMOS, PROGRAMMABLE INTERRUPT CONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-85063 REV C-2005 MICROCIRCUIT, MICROPROCESSOR, DIGITAL, N-CHANNEL, 16-BIT MICROCONTROLLER, MONOLITHIC SILICON

Magyar Szabványügyi Testület

MSZ 771/5-1979 Mechanical properties of semiconductor materials

National Standardisation Body (ASRO)

STAS 6360-1974 SEMICONDUCTOR MATERIALS AND DEVICES Terminology

Indonesia Standards

SNI 19-0429-1989 Guide for sampling of liquid and semi solid materials

British Standards Institution (BSI)

BS IEC 62899-203:2024 Printed electronics - Materials. Semiconductor ink
BS PD IEC TR 63378-1:2021 Thermal standardization on semiconductor packages-Thermal resistance and thermal parameter of BGA, QFP type semiconductor packages
BS IEC 62899-203:2018 Printed electronics. Materials. Semiconductor ink
PD IEC TR 63378-1:2021 Thermal standardization on semiconductor packages. Thermal resistance and thermal parameter of BGA, QFP type semiconductor packages

German Institute for Standardization

DIN 50441-1:1996 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 1: Thickness and thickness variation
DIN 50454-2:1994 Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 2: Indium phosphide

International Electrotechnical Commission (IEC)

IEC 60191-2:1966(2000) Mechanical Standardization of Semiconductor Devices Part 2: Dimensions
IEC 62899-203:2024 Printed electronics – Part 203: Materials – Semiconductor ink

Association Francaise de Normalisation

XP CEN/TS 16599:2014 Photocatalysis - Determination of irradiation conditions to test the photocatalytic properties of semiconductor materials

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