Semiconductor gap measurement
Semiconductor gap measurement, Total:223 items.
The international standard classification for "Semiconductor gap measurement" includes: Nuclear energy in general , Nuclear energy engineering , Testing of metals , Optoelectronics. Laser equipment , Semiconducting materials , Other semiconductor devices .
The Chinese standard classification for "Semiconductor gap measurement" includes: Nuclear instrument and detector in general , Nuclear detector , Metal physical property test method , Laser device , Semimetal and semiconductor material in general , Microcircuit in general .
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
- GB/T 5201-2012 Test procedures for semiconductor charged particle detectors
- GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal
- GB/T 11685-2003 Measurement procedures for semiconductor X-ray detector system and semiconductor X-ray energy spectrometers
- GB/T 42676-2023 Test method for crystalline quality of semiconductive single crystal―X-ray diffraction method
- GB/T 6616-2023 Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films—Noncontact eddy-current gauge
- GB/T 41853-2022 Semiconductor devices—Micro-electromechanical devices—Wafer to wafer bonding strength measurement
- GB/T 31359-2015 Test methods of semiconductor lasers
- GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal
- GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal
Professional Standard - Electron
- SJ/T 11487-2015 Non-contact measurement method for the resistivity of semi-insulating semiconductor wafer
- SJ/T 2658.7-2015 Measuring method for semiconductor infrared-emitting diode. Part 7: Radiant flux
- SJ/T 9534-1993 Grading standard of quality for semiconductor integrated circuits
- SJ 2433-1984 Bonding sheet for semiconductor tubes
- SJ 2355.6-1983 Method of measurement for luminous flux of light-emitting devices
- SJ/T 9533-1993 Grading standard of quality for semiconductor discrete devices
未注明发布机构
- EIA JEDEC JESD51-1995 Methodology for the Thermal Measurement of Component Packages (Single Semiconductor Device)
- SEMI F75-0521-2021 Guide for quality monitoring of ultrapure water used in semiconductor manufacturing
Taiwan Provincial Standard of the People's Republic of China
- CNS 13805-1997 Method of Measurement for Photoluminescence of Optoelectronic Semiconductor Wafers
Group Standards of the People's Republic of China
- T/SHDSGY 113-2022 Radio frequency front end semiconductor test software
Military Standard of the People's Republic of China-General Armament Department
- GJB 33/16-2011 Semiconductor optoelectronic device.Detail specification for type 3DU32 semiconductor phototransistor
Institute of Electrical and Electronics Engineers (IEEE)
- IEEE N42.31-2003 Measurement Procedures for Resolution and Efficiency of Wide-Bandgap Semiconductor Detectors of Ionizing Radiation
- IEEE/ANSI N42.31-2003 American National Standard for Measurement Procedures for Resolution and Efficiency of Wide-Bandgap Semiconductor Detectors of Ionizing Radiation
- IEEE No 256-1963 IEEE Test Procedure for Semiconductor Diodes
- IEEE 660-1986 Semiconductor memory test pattern language
Association Francaise de Normalisation
- NF C80-204*NF EN 62418:2011 Semiconductor devices - Metallization stress void test
- NF EN IEC 63364-1:2023 Semiconductor devices - Semiconductor devices for IDO system - Part 1: Acoustic variation detection test method
- NF EN 62417:2010 Semiconductor Devices – Mobile Ion Testing for Metal Oxide Field Effect Semiconductor Transistors (MOSFETs)
- NF C96-364-1*NF EN IEC 63364-1:2023 Semiconductor devices - Semiconductor devices for IoT system - Part 1 : test method of sound variation detection
British Standards Institution (BSI)
- BS EN 62418:2010 Semiconductor devices. Metallization stress void test
- BS IEC 60747-14-5:2010 Semiconductor devices - Semiconductor sensors - PN-junction semiconductor temperature sensor
- BS EN 62007-2:2000 Semiconductor optoelectronic devices for fibre optic system applications - Measuring methods
- 13/30264596 DC BS EN 60747-14-7. Semiconductor devices. Part 14-7. Semiconductor sensor. Flow meter
- BS IEC 60747-14-4:2011 Semiconductor devices. Discrete devices. Semiconductor accelerometers
- BS EN 62007-2:2009 Semiconductor optoelectronic devices for fibre optic system applications - Measuring methods
- BS IEC 60747-14-2:2001 Discrete semiconductor devices and integrated circuits - Semiconductor devices - Semiconductor sensors - Hall elements
- BS IEC 60747-14-3:2009 Semiconductor devices - Semiconductor sensors - Pressure sensors
- BS IEC 60747-5-4:2022 Semiconductor devices - Optoelectronic devices. Semiconductor lasers
- BS IEC 62830-5:2021 Semiconductor devices. Semiconductor devices for energy harvesting and generation. Test method for measuring generated power from flexible thermoelectric devices
- BS EN 62830-3:2017 Semiconductor devices. Semiconductor devices for energy harvesting and generation - Vibration based electromagnetic energy harvesting
- BS IEC 62830-1:2017 Semiconductor devices. Semiconductor devices for energy harvesting and generation - Vibration based piezoelectric energy harvesting
- BS IEC 62830-4:2019 Semiconductor devices. Semiconductor devices for energy harvesting and generation - Test and evaluation methods for flexible piezoelectric energy harvesting devices
- 18/30355426 DC BS EN 62830-5. Semiconductor devices. Semiconductor devices for energy harvesting and generation. Part 5. Test method for measuring generated power from flexible thermoelectric devices
- BS IEC 60747-14-2:2000 Discrete semiconductor devices and integrated circuits - Semiconductor devices - Semiconductor sensors - Hall elements
- BS IEC 60747-14-3:2001 Discrete semiconductor devices and integrated circuits. Semiconductor devices. Semiconductor sensors-Pressure sensors
- BS IEC 62830-7:2021 Semiconductor devices. Semiconductor devices for energy harvesting and generation. Linear sliding mode triboelectric energy harvesting
- BS EN IEC 63364-1:2022 Semiconductor devices. Semiconductor devices for IoT system - Test method of sound variation detection
- BS EN 62779-1:2016 Semiconductor devices. Semiconductor interface for human body communication. General requirements
- BS IEC 62951-7:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for characterizing the barrier performance of thin film encapsulation for flexible organic semiconductor
- BS IEC 60747-14-1:2001 Discrete semiconductor devices and integrated circuits - Semiconductor devices - Semiconductor sensors - General and classification - Sensor generals and classification for semiconductor sensors
- BS EN 60747-15:2004 Discrete semiconductor devices. Isolated power semiconductor devices
- BS IEC 60747-14-11:2021 Semiconductor devices - Semiconductor sensors. Test method of surface acoustic wave-based integrated sensors for measuring ultraviolet, illumination and temperature
- BS EN IEC 60749-39:2022 Semiconductor devices. Mechanical and climatic test methods. Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
- BS IEC 60747-14-1:2000 Discrete semiconductor devices and integrated circuits. Semiconductor devices. Semiconductor sensors-General and classification-Sensor generals and classification for semiconductor sensors
- BS 3494-2:1966 Recommendations on semiconductors devices. Methods of measurement of the characteristics of diaode and transistors
- BS EN IEC 60747-15:2024 Semiconductor devices - Discrete devices. Isolated power semiconductor devices
- BS EN 60747-15:2012 Semiconductor devices. Discrete devices. Isolated power semiconductor devices
- BS PD ES 59008-4-1:2001 Data requirements for semiconductor die. Specific requirements and recommendations-Test and quality
- BS IEC 62830-3:2017 Semiconductor devices - Semiconductor devices for energy harvesting and generation. - Part 3: Vibration based electromagnetic energy harvesting
- BS IEC 60747-6:2001 Discrete semiconductor devices and integrated circuits - Thyristors
- BS IEC 60747-5-4:2006 Semiconductor devices - Discrete devices - Optoelectronic devices - Semiconductor lasers
- BS IEC 62951-6:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for sheet resistance of flexible conducting films
- BS IEC 60747-6:2000 Discrete semiconductor devices and integrated circuits - Thyristors
- BS IEC 62951-5:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for thermal characteristics of flexible materials
- PD ES 59008-4-1:2001 Data requirements for semiconductor die. Specific requirements and recommendations. Test and quality
International Electrotechnical Commission (IEC)
- IEC 62418:2010 Semiconductor devices - Metallization stress void test
- IEC 60747-14-5:2010 Semiconductor devices - Part 14-5: Semiconductor sensors - PN-junction semiconductor temperature sensor
- IEC 62830-5:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 5: Test method for measuring generated power from flexible thermoelectric devices
- IEC 62830-2:2017 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 2: Thermo power based thermoelectric energy harvesting
- IEC 62830-3:2017 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 3: Vibration based electromagnetic energy harvesting
- IEC 60747-14-2:2000 Semiconductor devices - Part 14-2: Semiconductor sensors; Hall elements
- IEC 60146:1973 Semiconductor convertors
American National Standards Institute (ANSI)
- ANSI N42.31-2003 Measurement Procedures for Resolution and Efficiency of Wide-Bandgap Semiconductor Detectors of Ionizing Radiation
Magyar Szabványügyi Testület
- MNOSZ 700-16.lap-1955 Detection of Nickel Content in Semiconductors
- MNOSZ 700-18.lap-1956 Detection of chlorine content in semiconductors
- MSZ 700/41.lap-1961 STMicroelectronics testing. Quickly determine total sulfur content
- MSZ 7200/5-1985 Measurement methods for high power semiconductor tools
- MNOSZ 700-15.lap-1955 Determination of sulfate content in STMicroelectronics
- MNOSZ 700-19.lap-1955 STMicroelectronics Pitch Content
- MSZ 700/23.lap-1965 STMicroelectronics tests coke
- MSZ 700/24.lap-1965 STMicroelectronics Coke Test
- MSZ 700/36.lap-1961 Semiconductor testing experiments in coal mines
- MSZ 700/27.lap-1962 STMicroelectronics test flash definition
- MNOSZ 700-8.lap-1955 STMicroelectronics tests carbon and jaundice
Gosstandart of Russia
- GOST R 50471-1993 Semiconductor photoemitters. Measuring method for halfintensity angle
- GOST 18986.10-1974 Semiconductor diodes. Methods for measuring inductance
- GOST 18986.12-1974 Semiconductor tunnel diodes. Method for measuring negative conductance of the intrinsic diode
- GOST 24461-1980 Power semiconductor devices. Test and measurement methods
- GOST 18986.15-1975 Reference diodes. Method of measuring stabilization voltage
- GOST 18986.24-1983 Semiconductor diodes. Measurement method of breakdown voltage
- GOST 18986.11-1984 Semiconductor diodes. Total series equivalent resistance measurement methods
- GOST 26222-1986 Ionizing-radiation semiconductor detectors. Methods of parameters measurement
- GOST 19834.0-1975 Semiconductor emitters. Methods for measurement of parameters. General principles
- GOST 18986.23-1980 Zener diodes. Methods for measuring spectral noise density
- GOST 18986.14-1985 Semiconductor diodes. Methods for measuring differential and slope resistances
- GOST 26239.7-1984 Semiconductor silicon. Method of oxygen, carbon and nitrogen determination
- GOST 19834.4-1979 Semiconductor radiating infra-red diodes. Methods of measurement of radiation power
- GOST 18986.8-1973 Semiconductor diodes. Method for measuring reverse recovery time
- GOST 18986.22-1978 Reference diodes. Methods for measuring differential resistance
- GOST 19656.0-1974 Semiconductor UHF diodes. Measurement methods of electrical parameters. General conditions
- GOST 19656.5-1974 Semiconductor UHF mixer and detector diodes. Measurement methods of output noise ratio
- GOST 18986.17-1973 Reference diodes. Method of measuring of temperature coefficient of working voltage
CZ-CSN
- CSN 35 8754-1973 Semiconductor devices. Transistors. Measurement of short-circuit output admittance
- CSN 35 8773-1977 Meaaurement of semiconductor devices. Thyristors. Meaaurement of blocking current and reverse blocking current.
- CSN 35 8756-1973 Semiconductor devices. Transistors Measurement of y-parameters
- CSN 35 8740-1973 Semiconduotor deviees. Transistore. Measurement of saturation voltage
- CSN 35 8732-1964 Semiconductor diodes. Measurement of forward current
- CSN 35 8742-1973 Semiconductor devices. Transistors. Measurement of cut-oíf currents
- CSN 35 8736-1964 Semiconductor diodes. Measurement of interelectrode capacitanoe
- CSN 35 1603-1983 Power semiconductor devices. General methodes of measurements
- CSN 35 8734-1975 Semieonductor devices. Diodcs. Measurement of reverse current.
- CSN 35 8770-1970 Thyristors. Method of measurement on-state voltage
- CSN 35 8701-1975 Terminology of semiconductors and semiconductor devices
- CSN 35 8759-1977 Semiconductor devices. Transistors. Methods of measurement of switching times
- CSN 35 8749-1973 Semiconductor devices. Transistors. Measurement of absolute value of short-circuit forward transfer admittance
- CSN 35 8772-1970 Thyristors. Method of measuring holding current
- CSN 35 8850 Cast.2-1984 Semiconductor radiation detectors. Main parameters of measuring methods
- CSN 35 8767-1982 Semiconductor diodes Methods of electrical parameters measurement
- CSN 35 8850 Cast.1-1984 Semiconductor radiators. Main parameters of measuring methods
- CSN 35 8737-1975 Semiconductor devices. Diodes. Measurement of differential rosistanoe
- CSN 35 8760-1973 Seraiconductors. Stabilizing diodes. Measurement of voltage temperature coefficient
- CSN 35 8768-1983 Semiconductor switching diodes. Electric parameters measurement methods
- CSN 35 8735-1964 Semiconductor diodes. Measurement of d. c. currents and voltages
- CSN 35 8769-1983 Semiconductor Zener diodes. Electric parameters measurement methods
- CSN 35 8763-1973 Semiconductor devices. Diodes. Measurement o? reverse breakdown voltage
- CSN 35 8752-1976 Semiconductor devices. Transistors. Measuring methods for common base output capacitance.
- CSN 35 8761-1973 Semiconductor devices. Phototransistors photodíodes. Measurement of photoelectric current
- CSN 35 8731-1975 Semiconductor devices. Diodes Measurement of d. c. forward voltage
- CSN 35 8762-1973 Semiconductor devices. Phototransistors photodiodes. Measurement of dark current
- CSN 35 8766-1976 Semieonductor devices. Switching diodes. Measurement cf forward volíage.
- CSN 35 1540-1979 Tests of power semiconductor converters
- CSN 35 8785-1975 Semiconductor devices. Varicaps. Measurement of thermal capacitance coefflcient.
- CSN 35 8701 Z1-1997 Semiconductor naming
- CSN 35 8765-1976 Semiconductor devices. Switching diodes. Measurement of reverse recovery charge.
- CSN 35 8764-1976 Semicoaductor devices. Switching diodes. Measurement o? reverse recovery time.
Korean Agency for Technology and Standards (KATS)
- KS C 2607-1980 TESTING METHODS OF SEMICONDUCTOR
- KS C 2607-1974(2000) TESTING METHODS OF SEMICONDUCTOR
- KS C 2607-2002 TESTING METHODS OF SEMICONDUCTOR
- KS C 6563-1996(2016) Principal measuring methods for semiconductor pressure sensor elements
- KS C 6563-1996(2021) Principal measuring methods for semiconductor pressure sensor elements
- KS C 6563-2021 Principal measuring methods for semiconductor pressure sensor elements
- KS C 6520-2021 Components and materials of semiconductor process —Measurement of wear characteristics by plasma
German Institute for Standardization
- DIN 66140 E:2021-06 Capillary fluid porosity measurement Measurement of pores through solids
- DIN 50447:1995 Testing of materials for semiconductor technology - Contactless determination of the electrical sheet resistance of semiconductor layers with the eddy-current method
- DIN EN 62779-1:2017-01*VDE 0884-79-1:2017-01 Semiconductor devices – Semiconductor interface for human body communication
- DIN EN IEC 62969-4:2019-03*VDE 0884-69-4:2019-03 Semiconductor devices – Semiconductor interface for automotive vehicles
- DIN EN IEC 62969-2:2018-09*VDE 0884-69-2:2018-09 Semiconductor devices – Semiconductor interface for automotive vehicles
- DIN EN 62779-2:2017-01*VDE 0884-79-2:2017-01 Semiconductor devices – Semiconductor interface for human body communication
- DIN EN IEC 62969-1:2018-08*VDE 0884-69-1:2018-08 Semiconductor devices – Semiconductor interface for automotive vehicles
- DIN EN IEC 62969-3:2018-12*VDE 0884-69-3:2018-12 Semiconductor devices – Semiconductor interface for automotive vehicles
- DIN EN 62779-3:2017-03*VDE 0884-79-3:2017-03 Semiconductor devices – Semiconductor interface for human body communication
- DIN 50441-1:1996 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 1: Thickness and thickness variation
- DIN EN 62418:2010 Semiconductor devices - Metallization stress void test (IEC 62418:2010); German version EN 62418:2010
- DIN 50441-2:1998 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 2: Testing of edge profile
- DIN VDE V 0884-11:2017-01*VDE V 0884-11:2017-01 Semiconductor devices
- DIN EN IEC 60747-17:2021-10*VDE 0884-17:2021-10 Semiconductor devices
- DIN EN IEC 60747-5-5:2021-10*VDE 0884-5:2021-10 Semiconductor devices
- DIN EN 62417:2010-12 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
- DIN IEC 747-11:1992 Semiconductor devices; Sectional specification for semiconductor devices
- DIN 4518-3:1974 Semiconductor Paper
- DIN IEC 60747-11:1992 Semiconductor devices; sectional specification for semiconductor devices; identical with IEC 60747-11:1985
- DIN 50443-1:1988 Testing of materials for use in semiconductor technology; detection of crystal defects and inhomogeneities in silicon single crystals by X-ray topography
- DIN 50449-2:1998 Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 2: Boron in gallium arsenide
- DIN 50448:1998 Testing of materials for semiconductor technology - Contactless determination of the electrical resistivity of semi-insulating semi-conductor slices using a capacitive probe
- DIN EN 60146-2:2001-02*VDE 0558-2:2001-02 Semiconductor converters
- DIN EN 62830-3 E:2014-09 Semiconductor devices Semiconductor devices for energy harvesting and power generation Part 3: Vibration-based electromagnetic energy harvesting
- DIN IEC 60747-14-5 E:2008 Draft Document - Semiconductor devices - Part 14-5: Semiconductor sensors - PN-junction semiconductor temperature sensor (IEC 47E/353/CD:2007)
PL-PKN
- PN T01208-03-1992 Semiconductor devices Bipolar transistors Measuring methods
YU-JUS
- JUS N.R1.470-1985 Semiconductor devices. Reference methods of measurement
- JUS N.R1.322-1979 Terms and definitions for semiconductor ?evices. Thyristors
- JUS N.R1.500-1980 Semioonductor ?evices. Acceptance. Electrical tests
Japanese Industrial Standards Committee (JISC)
- JIS K 0315:2022 Method for measuring reducing trace gases by semiconductor-type trace gas measuring equipment
(U.S.) Joint Electron Device Engineering Council Soild State Technology Association
- JEDEC JEB5-A-1970 Methods of Measurement for Semiconductor Logic Gating Microcircuits
- JEDEC JEP140-2002 Beaded Thermocouple Temperature Measurement of Semiconductor Packages
- JEDEC JEB15-1969 Terminology and Methods of Measurement for Bistable Semiconductor Microcircuits
- JEDEC JESD286-B-2000 Standard for Measuring Forward Switching Characteristics of Semiconductor Diodes
- JEDEC EIA-318-B-1996 Measurement of Reverse Recovery Time for Semiconductor Signal Diodes [Replaced: JEDEC 318-1]
GOST
- GOST R 71645-2024 Silicon is a semiconductor. Method of measuring the concentration of impurities
- GOST R 71665-2024 Radiation detectors silicon. Method for determining dose sensitivity
ABS - American Bureau of Shipping
- ABS 249-2017 GUIDANCE NOTES ON AIR GAP ANALYSIS FOR SEMI-SUBMERSIBLES
IN-BIS
- IS 4400 Pt.4-1981 Semiconductor Device Measurement Methods Part IV Transistors
- IS 4400 Pt.1-1967 Semiconductor device measurement methods Part Ⅰ General principles
- IS 4400 Pt.10-1983 Measurement Methods for Semiconductor Devices Part 10 Field Effect Transistors
- IS 7412-1974 Life test of semiconductor devices
- IS 12737-1988 Standard test procedures for semiconductor X-ray energy spectrometers
American Society for Testing and Materials (ASTM)
- ASTM F613-93 Test method for measuring semiconductor wafer diameter
- ASTM F1893-98(2003) Guide for Measurement of Ionizing Dose-Rate Burnout of Semiconductor Devices
- ASTM F1893-98 Guide for Measurement of Ionizing Dose-Rate Burnout of Semiconductor Devices
- ASTM STP 990-1989 Semiconductor Manufacturing Technology and Metrology
- ASTM F1893-18 Guide for Measurement of Ionizing Dose-Rate Survivability and Burnout of Semiconductor Devices
- ASTM STP 850-1984 Semiconductor processing
- ASTM F1191-88 Guidelines for Radiation Testing of Semiconductor Memory
- ASTM F2074-00 Standard Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers
- ASTM F1893-11 Guide for Measurement of Ionizing Dose-Rate Survivability and Burnout of Semiconductor Devices
Bureau of Indian Standards
- IS 4400-4-1981 Methods of measurements on semiconductor devices: Part 4 Transistors
- IS 4400-1-1967 Methods Of Measurements On Semiconductor Devices: Part 1 General
- IS 4400-10-1983 Methods of measurements on semiconductor devices: Part 10 Field effect transistors
- IS 4400-3-1968 Methods of Measurements on Semiconductor Devices - Part III : Rectifier Diodes
Society of Automotive Engineers (SAE)
- SAE AIR1921 Spark Igniter Semiconductor Resistance Measurement Using Controlled Energy Levels
- SAE AIR1921-1985 Spark Igniter Semiconductor Resistance Measurement Using Controlled Energy Levels
- SAE AIR1921-1994 SPARK IGNITER SEMICONDUCTOR RESISTANCE MEASUREMENT USING CONTROLLED ENERGY LEVELS
GCC Standardization Organization
- GSO IEC 60747-14-5:2015 Semiconductor devices - Part 14-5: Semiconductor sensors - PN-junction semiconductor temperature sensor
- GSO IEC 60747-15:2014 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
- GSO IEC 60191-2:2014 Mechanical standardization of semiconductor devices - Part 2: Dimensions
PH-BPS
- PNS IEC 62830-2:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 2: Thermo power based thermoelectric energy harvesting
Standard Association of Australia (SAA)
- AS 1955.2:1978 Semiconductor convertors - Semiconductor self-commutated convertors
- AS 1054:1973 Electromagnetic interference limits and measurements for semiconductor control devices
British Standard / International Electrotechnical Commission
- BS IEC 60747-5-4:2022+A1:2024 Semiconductor devices - Optoelectronic devices. Semiconductor lasers
Danish Standards Foundation
- DS/EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
- DANSK DS/EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
Swedish Institute for Standards
- SS-EN 62417:2011 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
National Electrical Manufacturers Association(NEMA)
- NEMA CB-4:1989 Semiconductor Graphite
RO-ASRO
- STAS 11066/2-1980 THYRISTORS Test methods
- STAS 12124/1-1982 Semiconductor devices BIPOLAR TRANZISTORS Methods for measuring electrical static parameters
Spanish Association for Standardization (UNE)
- UNE-EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (Endorsed by AENOR in September of 2010.)
JP-JEITA
- JEITA ED7500A-2-2006 Standard for the dimensions of semiconductor devices (Discrete semiconductor devices)
Defense Logistics Agency
- DLA MIL-STD-750 F CHANGE 1-2013 TEST METHODS FOR SEMICONDUCTOR DEVICES
- DLA MIL-STD-750 F-2012 TEST METHOD STANDARD FOR SEMICONDUCTOR DEVICES
International Organization for Standardization (ISO)
- ISO/TS 17915:2013 Optics and photonics.Measurement method of semiconductor lasers for sensing
Comitato Elettrotecnico Italiano
- CEI EN 62417:2011 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
National Fire Protection Association (NFPA)
- NFPA FPH SECTION 6-30-2003 Semiconductor Manufacturing
European Committee for Electrotechnical Standardization(CENELEC)
- EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
Kingdom of Bahrain Testing and Metrology Directorate
- BH GSO IEC 63244-1:2024 Semiconductor devices - Semiconductor devices for wireless power transfer and charging - Part 1: General requirements and specifications
Military Standards (MIL-STD)
- MIL-STD-750-2A Mechanical test methods for semiconductor devices
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