Sign In |Help & Support
ALL SECTORS
  • ALL SECTORS
  • GB(National Standard)
  • CB(Shipping)
  • CECS(Engineering Construction)
  • CJ(Urban Construction)
  • CY(News and Publication)
  • DB(Provincial Standard)
  • DL(Electricity & Power)
  • DZ(Geology & Mineralogy)
  • FZ(Spinning & Textile)
  • GA(Public Security)
  • HB(Aviation)
  • HG(Chemical Industry)
  • HJ(Environmental Protection)
  • JB(Machinery)
  • JC(Building Materials)
  • JG(Building & Construction)
  • JJ(Metering)
  • JT(Highway & Transportation)
  • LY(Forestry)
  • MT(Coal)
  • NB(Energy)
  • NY(Agriculture)
  • QB(Light Industry)
  • QC(Automobile & Vehicle)
  • QJ(Aerospace)
  • SH(Petrochemical)
  • SJ(Electronics)
  • SL(Water Resources)
  • SN(Commodity Inspection)
  • SY(Oil & Gas)
  • TB(Railway & Train)
  • YB(Ferrous Metallurgy)
  • YC(Tobacco)
  • YD(Telecommunication)
  • YY(Medical Device)
Database: 365,228(8 Aug 2026)

Semiconductor gap measurement

Semiconductor gap measurement, Total:223 items.

The international standard classification for "Semiconductor gap measurement" includes: Nuclear energy in general , Nuclear energy engineering , Testing of metals , Optoelectronics. Laser equipment , Semiconducting materials , Other semiconductor devices .

The Chinese standard classification for "Semiconductor gap measurement" includes: Nuclear instrument and detector in general , Nuclear detector , Metal physical property test method , Laser device , Semimetal and semiconductor material in general , Microcircuit in general .


General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

  • GB/T 5201-2012 Test procedures for semiconductor charged particle detectors
  • GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal
  • GB/T 11685-2003 Measurement procedures for semiconductor X-ray detector system and semiconductor X-ray energy spectrometers
  • GB/T 42676-2023 Test method for crystalline quality of semiconductive single crystal―X-ray diffraction method
  • GB/T 6616-2023 Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films—Noncontact eddy-current gauge
  • GB/T 41853-2022 Semiconductor devices—Micro-electromechanical devices—Wafer to wafer bonding strength measurement
  • GB/T 31359-2015 Test methods of semiconductor lasers
  • GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal
  • GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal

Professional Standard - Electron

  • SJ/T 11487-2015 Non-contact measurement method for the resistivity of semi-insulating semiconductor wafer
  • SJ/T 2658.7-2015 Measuring method for semiconductor infrared-emitting diode. Part 7: Radiant flux
  • SJ/T 9534-1993 Grading standard of quality for semiconductor integrated circuits
  • SJ 2433-1984 Bonding sheet for semiconductor tubes
  • SJ 2355.6-1983 Method of measurement for luminous flux of light-emitting devices
  • SJ/T 9533-1993 Grading standard of quality for semiconductor discrete devices

未注明发布机构

  • EIA JEDEC JESD51-1995 Methodology for the Thermal Measurement of Component Packages (Single Semiconductor Device)
  • SEMI F75-0521-2021 Guide for quality monitoring of ultrapure water used in semiconductor manufacturing

Taiwan Provincial Standard of the People's Republic of China

  • CNS 13805-1997 Method of Measurement for Photoluminescence of Optoelectronic Semiconductor Wafers

Group Standards of the People's Republic of China

Military Standard of the People's Republic of China-General Armament Department

  • GJB 33/16-2011 Semiconductor optoelectronic device.Detail specification for type 3DU32 semiconductor phototransistor

Institute of Electrical and Electronics Engineers (IEEE)

  • IEEE N42.31-2003 Measurement Procedures for Resolution and Efficiency of Wide-Bandgap Semiconductor Detectors of Ionizing Radiation
  • IEEE/ANSI N42.31-2003 American National Standard for Measurement Procedures for Resolution and Efficiency of Wide-Bandgap Semiconductor Detectors of Ionizing Radiation
  • IEEE No 256-1963 IEEE Test Procedure for Semiconductor Diodes
  • IEEE 660-1986 Semiconductor memory test pattern language

Association Francaise de Normalisation

British Standards Institution (BSI)

  • BS EN 62418:2010 Semiconductor devices. Metallization stress void test
  • BS IEC 60747-14-5:2010 Semiconductor devices - Semiconductor sensors - PN-junction semiconductor temperature sensor
  • BS EN 62007-2:2000 Semiconductor optoelectronic devices for fibre optic system applications - Measuring methods
  • 13/30264596 DC BS EN 60747-14-7. Semiconductor devices. Part 14-7. Semiconductor sensor. Flow meter
  • BS IEC 60747-14-4:2011 Semiconductor devices. Discrete devices. Semiconductor accelerometers
  • BS EN 62007-2:2009 Semiconductor optoelectronic devices for fibre optic system applications - Measuring methods
  • BS IEC 60747-14-2:2001 Discrete semiconductor devices and integrated circuits - Semiconductor devices - Semiconductor sensors - Hall elements
  • BS IEC 60747-14-3:2009 Semiconductor devices - Semiconductor sensors - Pressure sensors
  • BS IEC 60747-5-4:2022 Semiconductor devices - Optoelectronic devices. Semiconductor lasers
  • BS IEC 62830-5:2021 Semiconductor devices. Semiconductor devices for energy harvesting and generation. Test method for measuring generated power from flexible thermoelectric devices
  • BS EN 62830-3:2017 Semiconductor devices. Semiconductor devices for energy harvesting and generation - Vibration based electromagnetic energy harvesting
  • BS IEC 62830-1:2017 Semiconductor devices. Semiconductor devices for energy harvesting and generation - Vibration based piezoelectric energy harvesting
  • BS IEC 62830-4:2019 Semiconductor devices. Semiconductor devices for energy harvesting and generation - Test and evaluation methods for flexible piezoelectric energy harvesting devices
  • 18/30355426 DC BS EN 62830-5. Semiconductor devices. Semiconductor devices for energy harvesting and generation. Part 5. Test method for measuring generated power from flexible thermoelectric devices
  • BS IEC 60747-14-2:2000 Discrete semiconductor devices and integrated circuits - Semiconductor devices - Semiconductor sensors - Hall elements
  • BS IEC 60747-14-3:2001 Discrete semiconductor devices and integrated circuits. Semiconductor devices. Semiconductor sensors-Pressure sensors
  • BS IEC 62830-7:2021 Semiconductor devices. Semiconductor devices for energy harvesting and generation. Linear sliding mode triboelectric energy harvesting
  • BS EN IEC 63364-1:2022 Semiconductor devices. Semiconductor devices for IoT system - Test method of sound variation detection
  • BS EN 62779-1:2016 Semiconductor devices. Semiconductor interface for human body communication. General requirements
  • BS IEC 62951-7:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for characterizing the barrier performance of thin film encapsulation for flexible organic semiconductor
  • BS IEC 60747-14-1:2001 Discrete semiconductor devices and integrated circuits - Semiconductor devices - Semiconductor sensors - General and classification - Sensor generals and classification for semiconductor sensors
  • BS EN 60747-15:2004 Discrete semiconductor devices. Isolated power semiconductor devices
  • BS IEC 60747-14-11:2021 Semiconductor devices - Semiconductor sensors. Test method of surface acoustic wave-based integrated sensors for measuring ultraviolet, illumination and temperature
  • BS EN IEC 60749-39:2022 Semiconductor devices. Mechanical and climatic test methods. Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • BS IEC 60747-14-1:2000 Discrete semiconductor devices and integrated circuits. Semiconductor devices. Semiconductor sensors-General and classification-Sensor generals and classification for semiconductor sensors
  • BS 3494-2:1966 Recommendations on semiconductors devices. Methods of measurement of the characteristics of diaode and transistors
  • BS EN IEC 60747-15:2024 Semiconductor devices - Discrete devices. Isolated power semiconductor devices
  • BS EN 60747-15:2012 Semiconductor devices. Discrete devices. Isolated power semiconductor devices
  • BS PD ES 59008-4-1:2001 Data requirements for semiconductor die. Specific requirements and recommendations-Test and quality
  • BS IEC 62830-3:2017 Semiconductor devices - Semiconductor devices for energy harvesting and generation. - Part 3: Vibration based electromagnetic energy harvesting
  • BS IEC 60747-6:2001 Discrete semiconductor devices and integrated circuits - Thyristors
  • BS IEC 60747-5-4:2006 Semiconductor devices - Discrete devices - Optoelectronic devices - Semiconductor lasers
  • BS IEC 62951-6:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for sheet resistance of flexible conducting films
  • BS IEC 60747-6:2000 Discrete semiconductor devices and integrated circuits - Thyristors
  • BS IEC 62951-5:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for thermal characteristics of flexible materials
  • PD ES 59008-4-1:2001 Data requirements for semiconductor die. Specific requirements and recommendations. Test and quality

International Electrotechnical Commission (IEC)

  • IEC 62418:2010 Semiconductor devices - Metallization stress void test
  • IEC 60747-14-5:2010 Semiconductor devices - Part 14-5: Semiconductor sensors - PN-junction semiconductor temperature sensor
  • IEC 62830-5:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 5: Test method for measuring generated power from flexible thermoelectric devices
  • IEC 62830-2:2017 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 2: Thermo power based thermoelectric energy harvesting
  • IEC 62830-3:2017 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 3: Vibration based electromagnetic energy harvesting
  • IEC 60747-14-2:2000 Semiconductor devices - Part 14-2: Semiconductor sensors; Hall elements
  • IEC 60146:1973 Semiconductor convertors

American National Standards Institute (ANSI)

  • ANSI N42.31-2003 Measurement Procedures for Resolution and Efficiency of Wide-Bandgap Semiconductor Detectors of Ionizing Radiation

Magyar Szabványügyi Testület

Gosstandart of Russia

  • GOST R 50471-1993 Semiconductor photoemitters. Measuring method for halfintensity angle
  • GOST 18986.10-1974 Semiconductor diodes. Methods for measuring inductance
  • GOST 18986.12-1974 Semiconductor tunnel diodes. Method for measuring negative conductance of the intrinsic diode
  • GOST 24461-1980 Power semiconductor devices. Test and measurement methods
  • GOST 18986.15-1975 Reference diodes. Method of measuring stabilization voltage
  • GOST 18986.24-1983 Semiconductor diodes. Measurement method of breakdown voltage
  • GOST 18986.11-1984 Semiconductor diodes. Total series equivalent resistance measurement methods
  • GOST 26222-1986 Ionizing-radiation semiconductor detectors. Methods of parameters measurement
  • GOST 19834.0-1975 Semiconductor emitters. Methods for measurement of parameters. General principles
  • GOST 18986.23-1980 Zener diodes. Methods for measuring spectral noise density
  • GOST 18986.14-1985 Semiconductor diodes. Methods for measuring differential and slope resistances
  • GOST 26239.7-1984 Semiconductor silicon. Method of oxygen, carbon and nitrogen determination
  • GOST 19834.4-1979 Semiconductor radiating infra-red diodes. Methods of measurement of radiation power
  • GOST 18986.8-1973 Semiconductor diodes. Method for measuring reverse recovery time
  • GOST 18986.22-1978 Reference diodes. Methods for measuring differential resistance
  • GOST 19656.0-1974 Semiconductor UHF diodes. Measurement methods of electrical parameters. General conditions
  • GOST 19656.5-1974 Semiconductor UHF mixer and detector diodes. Measurement methods of output noise ratio
  • GOST 18986.17-1973 Reference diodes. Method of measuring of temperature coefficient of working voltage

CZ-CSN

  • CSN 35 8754-1973 Semiconductor devices. Transistors. Measurement of short-circuit output admittance
  • CSN 35 8773-1977 Meaaurement of semiconductor devices. Thyristors. Meaaurement of blocking current and reverse blocking current.
  • CSN 35 8756-1973 Semiconductor devices. Transistors Measurement of y-parameters
  • CSN 35 8740-1973 Semiconduotor deviees. Transistore. Measurement of saturation voltage
  • CSN 35 8732-1964 Semiconductor diodes. Measurement of forward current
  • CSN 35 8742-1973 Semiconductor devices. Transistors. Measurement of cut-oíf currents
  • CSN 35 8736-1964 Semiconductor diodes. Measurement of interelectrode capacitanoe
  • CSN 35 1603-1983 Power semiconductor devices. General methodes of measurements
  • CSN 35 8734-1975 Semieonductor devices. Diodcs. Measurement of reverse current.
  • CSN 35 8770-1970 Thyristors. Method of measurement on-state voltage
  • CSN 35 8701-1975 Terminology of semiconductors and semiconductor devices
  • CSN 35 8759-1977 Semiconductor devices. Transistors. Methods of measurement of switching times
  • CSN 35 8749-1973 Semiconductor devices. Transistors. Measurement of absolute value of short-circuit forward transfer admittance
  • CSN 35 8772-1970 Thyristors. Method of measuring holding current
  • CSN 35 8850 Cast.2-1984 Semiconductor radiation detectors. Main parameters of measuring methods
  • CSN 35 8767-1982 Semiconductor diodes Methods of electrical parameters measurement
  • CSN 35 8850 Cast.1-1984 Semiconductor radiators. Main parameters of measuring methods
  • CSN 35 8737-1975 Semiconductor devices. Diodes. Measurement of differential rosistanoe
  • CSN 35 8760-1973 Seraiconductors. Stabilizing diodes. Measurement of voltage temperature coefficient
  • CSN 35 8768-1983 Semiconductor switching diodes. Electric parameters measurement methods
  • CSN 35 8735-1964 Semiconductor diodes. Measurement of d. c. currents and voltages
  • CSN 35 8769-1983 Semiconductor Zener diodes. Electric parameters measurement methods
  • CSN 35 8763-1973 Semiconductor devices. Diodes. Measurement o? reverse breakdown voltage
  • CSN 35 8752-1976 Semiconductor devices. Transistors. Measuring methods for common base output capacitance.
  • CSN 35 8761-1973 Semiconductor devices. Phototransistors photodíodes. Measurement of photoelectric current
  • CSN 35 8731-1975 Semiconductor devices. Diodes Measurement of d. c. forward voltage
  • CSN 35 8762-1973 Semiconductor devices. Phototransistors photodiodes. Measurement of dark current
  • CSN 35 8766-1976 Semieonductor devices. Switching diodes. Measurement cf forward volíage.
  • CSN 35 1540-1979 Tests of power semiconductor converters
  • CSN 35 8785-1975 Semiconductor devices. Varicaps. Measurement of thermal capacitance coefflcient.
  • CSN 35 8701 Z1-1997 Semiconductor naming
  • CSN 35 8765-1976 Semiconductor devices. Switching diodes. Measurement of reverse recovery charge.
  • CSN 35 8764-1976 Semicoaductor devices. Switching diodes. Measurement o? reverse recovery time.

Korean Agency for Technology and Standards (KATS)

German Institute for Standardization

PL-PKN

YU-JUS

Japanese Industrial Standards Committee (JISC)

  • JIS K 0315:2022 Method for measuring reducing trace gases by semiconductor-type trace gas measuring equipment

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association

  • JEDEC JEB5-A-1970 Methods of Measurement for Semiconductor Logic Gating Microcircuits
  • JEDEC JEP140-2002 Beaded Thermocouple Temperature Measurement of Semiconductor Packages
  • JEDEC JEB15-1969 Terminology and Methods of Measurement for Bistable Semiconductor Microcircuits
  • JEDEC JESD286-B-2000 Standard for Measuring Forward Switching Characteristics of Semiconductor Diodes
  • JEDEC EIA-318-B-1996 Measurement of Reverse Recovery Time for Semiconductor Signal Diodes [Replaced: JEDEC 318-1]

GOST

  • GOST R 71645-2024 Silicon is a semiconductor. Method of measuring the concentration of impurities
  • GOST R 71665-2024 Radiation detectors silicon. Method for determining dose sensitivity

ABS - American Bureau of Shipping

  • ABS 249-2017 GUIDANCE NOTES ON AIR GAP ANALYSIS FOR SEMI-SUBMERSIBLES

IN-BIS

  • IS 4400 Pt.4-1981 Semiconductor Device Measurement Methods Part IV Transistors
  • IS 4400 Pt.1-1967 Semiconductor device measurement methods Part Ⅰ General principles
  • IS 4400 Pt.10-1983 Measurement Methods for Semiconductor Devices Part 10 Field Effect Transistors
  • IS 7412-1974 Life test of semiconductor devices
  • IS 12737-1988 Standard test procedures for semiconductor X-ray energy spectrometers

American Society for Testing and Materials (ASTM)

  • ASTM F613-93 Test method for measuring semiconductor wafer diameter
  • ASTM F1893-98(2003) Guide for Measurement of Ionizing Dose-Rate Burnout of Semiconductor Devices
  • ASTM F1893-98 Guide for Measurement of Ionizing Dose-Rate Burnout of Semiconductor Devices
  • ASTM STP 990-1989 Semiconductor Manufacturing Technology and Metrology
  • ASTM F1893-18 Guide for Measurement of Ionizing Dose-Rate Survivability and Burnout of Semiconductor Devices
  • ASTM STP 850-1984 Semiconductor processing
  • ASTM F1191-88 Guidelines for Radiation Testing of Semiconductor Memory
  • ASTM F2074-00 Standard Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers
  • ASTM F1893-11 Guide for Measurement of Ionizing Dose-Rate Survivability and Burnout of Semiconductor Devices

Bureau of Indian Standards

  • IS 4400-4-1981 Methods of measurements on semiconductor devices: Part 4 Transistors
  • IS 4400-1-1967 Methods Of Measurements On Semiconductor Devices: Part 1 General
  • IS 4400-10-1983 Methods of measurements on semiconductor devices: Part 10 Field effect transistors
  • IS 4400-3-1968 Methods of Measurements on Semiconductor Devices - Part III : Rectifier Diodes

Society of Automotive Engineers (SAE)

  • SAE AIR1921 Spark Igniter Semiconductor Resistance Measurement Using Controlled Energy Levels
  • SAE AIR1921-1985 Spark Igniter Semiconductor Resistance Measurement Using Controlled Energy Levels
  • SAE AIR1921-1994 SPARK IGNITER SEMICONDUCTOR RESISTANCE MEASUREMENT USING CONTROLLED ENERGY LEVELS

GCC Standardization Organization

  • GSO IEC 60747-14-5:2015 Semiconductor devices - Part 14-5: Semiconductor sensors - PN-junction semiconductor temperature sensor
  • GSO IEC 60747-15:2014 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
  • GSO IEC 60191-2:2014 Mechanical standardization of semiconductor devices - Part 2: Dimensions

PH-BPS

  • PNS IEC 62830-2:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 2: Thermo power based thermoelectric energy harvesting

Standard Association of Australia (SAA)

  • AS 1955.2:1978 Semiconductor convertors - Semiconductor self-commutated convertors
  • AS 1054:1973 Electromagnetic interference limits and measurements for semiconductor control devices

British Standard / International Electrotechnical Commission

Danish Standards Foundation

  • DS/EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
  • DANSK DS/EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

Swedish Institute for Standards

  • SS-EN 62417:2011 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

National Electrical Manufacturers Association(NEMA)

RO-ASRO

Spanish Association for Standardization (UNE)

  • UNE-EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (Endorsed by AENOR in September of 2010.)

JP-JEITA

  • JEITA ED7500A-2-2006 Standard for the dimensions of semiconductor devices (Discrete semiconductor devices)

Defense Logistics Agency

International Organization for Standardization (ISO)

  • ISO/TS 17915:2013 Optics and photonics.Measurement method of semiconductor lasers for sensing

Comitato Elettrotecnico Italiano

  • CEI EN 62417:2011 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

National Fire Protection Association (NFPA)

European Committee for Electrotechnical Standardization(CENELEC)

  • EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

Kingdom of Bahrain Testing and Metrology Directorate

  • BH GSO IEC 63244-1:2024 Semiconductor devices - Semiconductor devices for wireless power transfer and charging - Part 1: General requirements and specifications

Military Standards (MIL-STD)