diode

diode, Total:136 items.

The international standard classification for "diode" includes: Capacitors , Diodes , Optoelectronics. Laser equipment , Aerospace electric equipment and systems , Solar energy engineering , Nuclear energy in general , Industrial process measurement and control , Glass products .

The Chinese standard classification for "diode" includes: Technical management , Technical management , Technical Management , Microwave and millimeter wave diode and triode , Technical management , Technical management , Semiconductor diode , Electronic components , Power semiconductor device and parts , Solar energy , Nuclear detector , Monitoring instrument , Industrial technical glass , Optical communication equipment .

Professional Standard - Education

JY 182-1984 vacuum diode

Professional Standard - Military and Civilian Products

WJ 2100-2004 Test method for silicon photodiodes and silicon avalanche photodiodes

Professional Standard - Electron

SJ 1391-1978 Methods of measurement for voltage standing wave ratio on cold conditions of noise-generator diodes
SJ 1228-1977 Detail specification for germanium wideband detector diodes,Type 2AP30~2AP31
SJ 20070-1992 Semiconductor discrete device.Detail specification for silicon switching diode for type 2CK105
SJ 20274-1993 Semiconductor discrete devices Detail specificion for silicon switching diode for type 2CK84
SJ 2216-1982 Silicon photodiodes
SJ 1226-1977 Detail specification for germanium detector diodes,Type 2AP9~2AP10
SJ 50033.46-1994 Semiconductor discrete device-Detail specification for type 2CZ59 silicon rectifier diode
SJ/T 11401-2009 Series program for semiconductor light emitting diodes
SJ 1807-1981 Detail specification for silicon tuning variable capacitance diodes,for Type 2CC120,2CC122 and 2CC124;2CC220,2CC222 and 2CC224;2CC320,2CC322,2CC324;2CC420,2CC422 and 2CC424
SJ 1945-1981 Detail specification for silicon damper diodes,Types 2CN1D~2D,2DN1D~2D,2CN3D~3K,2DN3D~3K,2CN6D~6K and 2DN6D~6K
SJ 910-1974 Detail specification for silicon voltage regulator diodes,Type 3DW50~202
SJ 2718-1986 Detail specification for silicon medium speed switching rectifier diodes,Type 2CZ302
SJ 2214.3-1982 Method of measurement for dark current of semiconductor photodiodes
SJ 2215.2-1982 Method of measurement for forward voltage of semiconductor photocouplers (diodes)
SJ 2140-1982 Methods of measurement for limiting voltage of silicon current regulator diodes
SJ 2214.5-1982 Method of measurement for junction capacitance of semiconductor photodiodes
SJ 2354.4-1983 Method of measurement for forward voltage drop of PIN and avalanche photodiodes
SJ 2138-1982 Methods of measurement for regulated current of silicon current regulator diodes
SJ 2732-1986 Detail specification for silicon high speed switching rectifier diodes,Type 2CZ318
SJ 1227-1977 Detail specification for germanium detector diodes,Type 2AP1~2AP8,2AP21 and 2AP27
SJ 1229-1977 Detail specification for germanium switching diodes,Type 2AK1~20
SJ 2730-1986 Detail specification for silicon medium speed switching rectifier diodes,Type 2CZ316
SJ/T 11403-2009 Laser diode modules used for telecommunication - Reliability assessment
SJ 50033/101-1995 Detail specification for semiconductor laser diode modules for Type GJ1325
SJ 2137-1982 General procedures of measurement for silicon current-regulator diodes
SJ 20788-2000 Measurment method for thermal impedance of semiconductor diodes
SJ 50033/69-1995 Semiconductor discrete device-Detail specification for Type PIN30 series for PIN diode
SJ 1946-1981 Detail specification for silicon voltage booster diodes,Type 2CN4C,2DN4C,2CN5C and 2DN5C
SJ 2728-1986 Detail specification for silicon medium speed switching rectifier diodes,Type 2CZ314
SJ 50033/41-1994 Detail specification for type GR9414 semiconductor infrared light emitting diode
SJ 50033/125-1997 Semiconductor discrete device - Detail specification for silicon PIN diodes for Type PIN11~15
SJ 2747-1987 Blank detail specification for step-function recovery diodes
SJ 1386-1978 Measurement conditions for noise-generator diodes and gas discharge noise tubes
SJ/T 11624-2016 Specifications of LED devices for LED displays
SJ 50033/165-2003 Semiconductor discrete devices Detail specification for type PIN0003 PIN diode
SJ 909-1974 Detail specification for silicon voltage regulator diodes,Type 2CW50~149
SJ 1948-1981 Detail specification for high frequency rectifier diodes,Types 2CZ90D~90J,2DZ90D~90J,2CZ91D~91J,2DZ91D~91J,2CZ92D~92J and 2DZ92D~92J
SJ 2214.2-1982 Method of measurement for forward voltage of semiconductor photodiodes
SJ 2720-1986 Detail specification for silicon medium speed switching recitifier diodes,Type 2CZ304
SJ 2214.4-1982 Method of measurement for reverse break-down voltage of semiconductor photodiodes
SJ 2749-1987 Method of measurement for semiconductor laser diodes
SJ 50033/70-1995 Semiconductor discrete device - Detail specification for Type PIN35 series for PIN diode
SJ 50033/164-2003 Semiconductor discrete devices Detail specification for type PIN0002 PIN diode
SJ 1392-1978 Methods of measurement for excess noise power of noise-generator diodes
SJ 1390-1978 Methods of measurement for nonliearity factor of excess noise power of noise-generator diodes
SJ 2141-1982 Methods of measurement for breakdown voltage of silicon currenet regulator diodes
SJ 2218-1982 Semiconductor photocouplers in the diode mode
SJ 2727-1986 Detail specification for general purpose silicon rectifier diodes,Type 2CZ313
SJ 2717-1986 Detail specification for silicon general purpose rectifier diodes,Type 2CZ301
SJ 50033/71-1995 Semiconductor discrete device-Detail specification for Type PIN342 series for PIN diode
SJ 1387-1978 Methods of measurement for filament current and filament voltage of noise-generator diodes
SJ/T 2214-2015 Measuring methods for semiconductor photodiode and phototransistor
SJ 1388-1978 Methods of measurement for anode conductance of noise-generator diodes
SJ 1804-1981 Detail specification for silicon tuning variable capacitance diodes,Type 2CC101~104,2CC201~204,2CC301~304,2CC401~404
SJ 2750-1987 Outline dimensions for semiconductor laser diodes
SJ 1381-1978 Structure and technology of test diode
SJ 50033.48-1994 Semiconductor discrete device - Detail specification for type 2DV8CP silicon microwave detector diode
SJ 2726-1986 Detail specification for general purpose silicon rectifier diodes,Type 2CZ312
SJ 1389-1978 Methods of measurement for diodes leakage current between electrodes of noise-generator diodes
SJ 1225-1977 Detail specification for germanium detector diodes,Type 2AP11~2AP17
SJ 1805-1981 Detail specification for silicon frequency modulated variable capacitance diodes,Type 2CC126
SJ 2721-1986 Detail specification for silicon high speed switching rectifier diodes,Type 2CZ305
SJ 50033/108-1996 Semiconductor discrete device - Detail specification for Gunn diodes for Type 2EY5671, 2EY5672
SJ 2142-1982 Methods of measurement for current temperature coefficient of silicon current regulator diodes
SJ 1806-1981 Detail specification for silicon band switching varialbe capacitance diodes,Type 2CC110,2CC210,2CC310,2CC410,2CC130
SJ 50033/72-1995 Semiconductor discrete device - Detail specification for Type PIN323 series for PIN diode
SJ 1385-1978 General specification for noise-generator diodes and gas discharge noise tubes
SJ 1947-1981 Detail specification for silicon power rectifier diodes,Type 2CZ32B,2DZ32B,2CZ33B and 2DZ33B
SJ/T 2354-2015 Measuring methods for photodiodes of PIN、APD
SJ 911-1974 Detail specification for silicon planar temperature compensation voltage regulator diodes,Type 2DW230~236
SJ 1230-1977 Methods of measurement for high frequency rectified current of germanium detector diodes
SJ 2729-1986 Detail specification for silicon medium speed switching rectifier diodes,Type 2CZ315
SJ 2139-1982 Methods of measurement for dynamic impedance of silicon current regulator diodes
SJ 2215.3-1982 Method of measurement for forward current of semiconductor photocouplers (diodes)

Professional Standard - Aerospace

QJ 1299-1987 Specification for Screening of Silicon Microwave Mixer and Detector Diodes
QJ 2362-1992 Screening Specification for Step Recovery Diodes
QJ 2493-1993 Acceptance specification for microwave diodes and transistors
QJ 1907-1990 PIN Diode Screening Specifications

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

GB/T 6589-2002 Semiconductor Devices—Discrete deveice—Part 3-2:Signal (including switching) and regulator diodes—Blank detail specification for voltage-regulator diodes and voltage-reference diodes (e
GB/T 44292-2024 Electrostatic discharge susceptibility test for bypass diode applied in photovoltaic modules
GB/T 16894-1997 Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100A
GB/T 15649-1995 Blank detail specification for semiconductor laser diodes
GB/T 30241.1-2013 Zener diode safety barrier—Part 1:General technical specification
GB/T 30241.2-2013 Zener diode safety barrier—Part 2:Methods of evaluating the performance
GB/T 45543-2025 Substrate glass for organic light emitting diode (OLED) display devices
GB/T 6588-2000 Semiconductor devices--Discrete devices--Part 3:Signal(including switching)and regulator diodes--Section One--Blank detail specification for signal diodes,switching diodes and controlle
GB/T 23729-2009 Photodiodes for scintillation detectors - Test procedures

Professional Standard - Machinery

JB/T 5837-1991 ZP Series 2000A and above Case - Rated Rectifier Diodes
JB/T 5841-1991 ZH Series 200A and above Case Rated High Voltage Rectifier Diode
JB/T 7624-2013 Testing Methods for Rectifier Diodes

Military Standard of the People's Republic of China-Commission of Science,Technology and Industry for National Defence

GJB 5905-2006 Specification for fast recovery diodes, 600A and above

Professional Standard - Post and Telecommunication

YD/T 701-1993 Test Method for Semiconductor Laser Diode Assembly
YD/T 835-1996 Test Method of Avalanche Photodiodes
YD/T 834-1996 Test Method of Distributed Feedback Laser Diodes

Military Standard of the People's Republic of China-General Armament Department

GJB 3519-1999 General Specification for Semiconductor Laser Diodes

National Metrological Verification Regulations of the People's Republic of China

JJG(电子) 04050-1995 Verification rules for PCT-2 diode rapid screening instrument

Group Standards of the People's Republic of China

T/CVIA 49-2016 Organic Light Emitting Diode Display Device Terms and Symbols
T/CSA 047-2019 Measurement Method for Real Thermal Resistance and Impedance of Light Emitting Diodes

未注明发布机构

JEDEC JESD282B.02-2023 SILICON RECTIFIER DIODES

Taiwan Provincial Standard of the People's Republic of China

CNS 13809-1997 Light Emitting Diode Dice

International Electrotechnical Commission (IEC)

IEC 60747-3-1:1986 Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section One: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
IEC 60747-3:2013 Semiconductor devices - Part 3: Discrete devices: Signal, switching and regulator diodes
IEC 60747-3:1985 Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes.
IEC 60747-3-2:1986 Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference d
IEC 60747-3/AMD1:1991 Semiconductor devices; discrete devices; part 3: signal (including switching) and regulator diodes; amendment 1
IEC 60747-3/AMD2:1993 Semiconductor devices; discrete devices; part 3: signal (including switching) and regulator diodes; amendment 2

Korean Agency for Technology and Standards (KATS)

KS C IEC 60747-3-1:2006 Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section one：Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
KS C IEC 60747-3-2:2006 Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section Two：Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diodes
KS C IEC 60747-3:2016 Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes
KS C IEC 60747-3:2006 Semiconductor devices-Discrete devices-Part 3:Signal (including switching) and regulator diodes
KS C 5205-2002 RELIABILITY ASSURED VOLTAGE REGULATOR DIODES AND VOLTAGE REFERENCE DIODES

British Standards Institution (BSI)

BS IEC 60747-3:2013 Semiconductor devices. Discrete devices: Signal, switching and regulator diodes

Defense Logistics Agency

DLA MIL-L-376 C (1)-1994 LEAD DIOXIDE, TECHNICAL
DLA MIL-L-376 C-1983 LEAD DIOXIDE, TECHNICAL
DLA MIL-L-376 C NOTICE 1-1998 LEAD DIOXIDE, TECHNICAL
DLA MIL-PRF-19500/735-2006 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPE 1N7041CCU1 AND SINGLE DIODE TYPE 1N7045T3, JAN, JANTX, JANTXV, AND JANS

JP-JEITA

JEITA ED4912-2008 Light emitting diodes

Japan Electronics and Information Technology Industries Association

EIAJ ED 4910-1995 Light Emitting Diodes

Danish Standards Foundation

DS/IEC 747-3-2:1987 Semiconductor devices. Discrete devices. Part 3: Signal (including switching) and regulator diodes. Section 2: Blank detail specification for voltage regulator diodes and voltage reference diodes, excluding temperature compensated precision refere di
DS/IEC 747-3:1986 Semiconductor devices. Discrete devices. Part 3: Signal (including switching) and regulator diodes
DANSK DS/EN 120001:2016 Blank Detail Specification: Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor

Association Francaise de Normalisation

NF C96-832:1981 Semiconductors. Microwave diodes. Schottky diodes. General requirements.

Spanish Association for Standardization (UNE)

UNE-EN 120001:1992 BDS: LIGHT EMITTING DIODES, LIGHT EMITTING DIODE ARRAYS, LIGHT EMITTING DIODE DISPLAYS WITHOUT INTERNAL LOGIC AND RESISTOR. (Endorsed by AENOR in September of 1996.)
UNE-EN 120002:1992 Blank Detail Specification: Infrared emitting diodes, infrared emitting diode arrays

Aerospace Industries Association

AIA NAS717 Semiconductor Diodes

IECQ - IEC: Quality Assessment System for Electronic Components

PQC 105-1992 Blank Detail Specification for Light Emitting Diodes@ Light Emitting Diode Arrays

German Institute for Standardization

DIN IEC 60747-3:1992 Semiconductor devices; discrete devices; part 3: signal diodes and regulator diodes; identical with IEC 60747-3:1985
DIN EN 120001:1993-06 Blank detail specification: light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor; German version EN 120001:1992

Institute of Electrical and Electronics Engineers (IEEE)

IEEE 256-1963 SEMICONDUCTOR DIODES

U.S. Military Regulations and Norms

ARMY MIL-PRF-49169 B VALID NOTICE 1-2013 Light-Emitting Diode Array
ARMY MIL-PRF-49169 B-1999 LIGHT-EMITTING DIODE ARRAY
ARMY MIL-PRF-49169B-1999 LIGHT-EMITTING DIODE ARRAY

SE-SIS

SIS SS-CECC 20001-1991 Blank detail specification: Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor

Lithuanian Standards Office

LST EN 120001-2001 Blank detail specification. Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor