GaNAs
GaNAs, Total:43 items.
The international standard classification for "GaNAs" includes: Semiconducting materials , Powder metallurgy , Chemical analysis of metals , Testing of metals in general , Testing of metals .
The Chinese standard classification for "GaNAs" includes: Technical Management , Compound semiconductor material , Semimetal and semiconductor material in general , Semimetal , Rare metals and their alloys analysis method , Metallographic testing method , Metal physical property test method .
Professional Standard - Electron
- SJ/T 11492-2015 Test methods for measurement of composition of gallium arsenide phosphide wafers by photoluminescence
- SJ/T 11497-2015 Test method for thermal stability testing of gallium arsenide wafers
- SJ 20842-2002 Test method for Ga/As ratio of surface of gallium arsenide
- SJ/T 11496-2015 Determination of boron concentration in gallium arsenide by infrared absorption
- SJ 3242-1989 Gallium arsenide epitaxy wafers
- SJ 3241-1989 Gallium arsenide single-crystal bar and wafer
- SJ 3244.3-1989 Methods of measurement for crystal-orientation of single crystal of Gallium arsenide and Indium phosphide
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
- GB/T 11094-2007 Horizontal bridgman grown gallium arsenide single crystal and cutting wafer
- GB/T 25075-2010 Gallium arsenide single crystal for solar cell
- GB/T 20228-2006 Gallium arsenide single crystal
- GB/T 18032-2000 The inspecting method of AB microscopic defect in gallium arsenide single crystal
- GB/T 8760-2006 Gallium arsenide single crystal-determination of dislocation density
- GB/T 30854-2014 Gallium nitride based epitaxial layer for LED lighting
- GB/T 11094-1989 Boat-grown gallium arsenide single crystals and As-cut slices
- GB/T 11093-2007 Liquid encapsulated czochralski-grown gallium arsenide single crystals and as-cut slices
- GB/T 8758-1988 Measuring thickness of epitaxial layers of gallium arsenide by infrared interference
- GB 8760-1988 Gallium arsenide single crystal－Determination of dislocation density
- GB/T 30856-2014 GaAs substrates for LED epitaxial chips
- GB/T 8760-1988 Gallium arsenide single crystal; Determination of dislocation density
- GB/T 11093-1989 Liquid encapaulated czochralski-grouwn gallium arsenide single crystals and As-cut slices
国家市场监督管理总局、中国国家标准化管理委员会
- GB/T 20228-2021 Gallium arsenide single crystal
- GB/T 8760-2020 Test method for dislocation density of monocrystal gallium arsenide
- GB/T 37466-2019 Laser lift-off equipment used for GaN
- GB/T 11094-2020 Gallium arsenide single crystal and cutting wafer grown by horizontal bridgman method
Military Standard of the People's Republic of China-General Armament Department
- GJB 1926-1994 Gallium Arsenide Single Crystal Material Specification
- GJB 1927-1994 Gallium arsenide single crystal material testing method
- GJB 10074-2021 Specification for gallium arsenide polishing discs
- GJB 1927A-2021 Gallium arsenide single crystal material testing method
- GJB 5345-2004 Specification for gallium arsenide polishing discs
- GJB 3798A-2020 Gallium arsenide material defect map
- GJB 2833-1997 Gallium Arsenide Epitaxial Wafer Specifications
Group Standards of the People's Republic of China
- T/GDC 69-2020 Gallium Nitride Charger
Professional Standard - Non-ferrous Metal
- YS/T 1653-2023 Gallium nitride substrates
Taiwan Provincial Standard of the People's Republic of China
- CNS 13625-1995 Product Specifications for Round Polished Monocrystalline Gallium Arsenide Wafers
中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会
- GB/T 35305-2017 Monocrystalline gallium arsenide polished wafers for solar cell
CZ-CSN
- CSN 34 5941-1984 Gallium arsenide and gallium phospide monocrystalline. Determination of resistivity and Hall coefficient
Japanese Industrial Standards Committee (JISC)
- JIS H 1191:1991 Methods for chemical analysis of gallium arsenide
- JIS K 9524:1994 Arsenazo III
- JIS K 9543:1994 Arsenazo I
- JIS K 9524:2016 Arsenazo III (Reagent)
American Society for Testing and Materials (ASTM)
- ASTM F1212-89(1996)e1 Standard Test Method for Thermal Stability Testing of Gallium Arsenide Wafers
- ASTM F1212-89(2002) Standard Test Method for Thermal Stability Testing of Gallium Arsenide Wafers
(U.S.) Joint Electron Device Engineering Council Soild State Technology Association
- JEDEC JES2-1992 Transistor, Gallium Arsenide Power Fet, Generic Specification
gallium arsenide,GaInAs,Gallium Arsenide Enthalpy,copper indium gallium arsenic,Test method of carbon concentration in gallium arsenide,Gallium Arsenide Indium Phosphide Material Hall Migration,InGaAs Composition,Boron Content in Gallium Arsenide,InGaAs Composition,Carrier Concentration and Mobility GaAs Hall,Gallium Arsenide Solar Cells,Gallium Arsenide Material,InGaAs wavelength,Gallium Arsenide Wafer,GaNAs,Space Gallium Arsenide General Purpose,Gallium Arsenide Process,Gallium Arsenide Wafer,Gallium Arsenide Single Crystal,Gallium Arsenide Single Crystal for Solar Cells
