Diode Test Circuit

Diode Test Circuit, Total:175 items.

The international standard classification for "Diode Test Circuit" includes: Solar energy engineering , Diodes , Nuclear energy in general , Optoelectronics. Laser equipment , Electronic display devices .

The Chinese standard classification for "Diode Test Circuit" includes: Solar energy , Semiconductor diode , Nuclear detector , Semiconductor triode , Power semiconductor device and parts , Technical Management , Technical management , Technical management , Semiconductor emitting device , Computer peripherals , Microwave and millimeter wave diode and triode , Optical communication equipment .

Professional Standard - Military and Civilian Products

WJ 2506-1998 Verification Regulations for Photodiode Dynamic Tester
WJ 2100-2004 Test method for silicon photodiodes and silicon avalanche photodiodes

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

GB/T 6570-1986 Measuring methods for microwave diodes
GB/T 23729-2009 Photodiodes for scintillation detectors - Test procedures
GB/T 6571-1995 Semiconductor devices - Discrete devices - Part 3 : Signal(including switching)and regulator diodes
GB/T 44081-2024 Thermal runaway test for bypass diode applied in photovoltaic modules
GB/T 44292-2024 Electrostatic discharge susceptibility test for bypass diode applied in photovoltaic modules
GB/T 4023-2015 Semiconductor devices―Discrete devices and integrated circuits― Part 2: Rectifier diodes

Professional Standard - Electron

SJ 1391-1978 Methods of measurement for voltage standing wave ratio on cold conditions of noise-generator diodes
SJ 2214.10-1982 Method of measurement for light current of semiconductor photodiodes and phototransistors
SJ 2354.14-1983 Method of measurement for excess noise factor of PIN and avalanche photodiodes
SJ/T 11394-2009 Measure methods of semiconductor light emitting diodes
SJ 966-1975 Methods of measurement for reverse breakdown voltage of silicon switching diodes
SJ 2139-1982 Methods of measurement for dynamic impedance of silicon current regulator diodes
SJ 2137-1982 General procedures of measurement for silicon current-regulator diodes
SJ/T 2214-2015 Measuring methods for semiconductor photodiode and phototransistor
SJ 2749-1987 Method of measurement for semiconductor laser diodes
SJ 2354.3-1983 Method of measurement for dark current of PIN and avalanche photodiodes
SJ/T 2749-2016 Semiconductor Laser Diode Test Methods
SJ 1230-1977 Methods of measurement for high frequency rectified current of germanium detector diodes
SJ/T 11767-2020 Measurement method of low-frequency noise parameters for diodes
SJ 2658.3-1986 Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for Backward Voltage
SJ 1388-1978 Methods of measurement for anode conductance of noise-generator diodes
SJ/T 2354-2015 Measuring methods for photodiodes of PIN、APD
SJ/T 11471-2014 Measurement methods for epitaxial wafers of light-emitting diodes
SJ 1387-1978 Methods of measurement for filament current and filament voltage of noise-generator diodes
SJ 2354.11-1983 Method of measurement for width of blind zone of PIN and avalanche photodiode matrix
SJ 2658.4-1986 Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for Capacitance
SJ 2354.4-1983 Method of measurement for forward voltage drop of PIN and avalanche photodiodes
SJ 2354.13-1983 Method of measurement for multiplication factor of PIN and avalanche photodiodes
SJ/T 11281-2007 Test methods of LED panels
SJ 1392-1978 Methods of measurement for excess noise power of noise-generator diodes
SJ/T 11281-2025 Measure methods of light emitting diode (LED) displays
SJ 2215.6-1982 Method of measurement for junction capacitance of semiconductor photocouplers (diodes)
SJ 2354.5-1983 Method of measurement for capacitance of PIN and avalanche photodiodes
SJ 2354.2-1983 Method of measurement for reverse break-down voltage of PIN and avalanche photodiodes
SJ 2354.10-1983 Method of measurement for cross-light factor of PIN and avalanche photodiodes matrix
SJ 20788-2000 Measurment method for thermal impedance of semiconductor diodes
SJ 2142-1982 Methods of measurement for current temperature coefficient of silicon current regulator diodes
SJ 2215.4-1982 Method of measurement for reverse current of semiconductor photocouplers (diodes)
SJ 2140-1982 Methods of measurement for limiting voltage of silicon current regulator diodes
SJ 2354.12-1983 Method of measurement for temperature factor of reverse breakdown voltage of PIN and avalanche photodiodes
SJ 2214.5-1982 Method of measurement for junction capacitance of semiconductor photodiodes
SJ/T 2354-2015/0352 Measuring methods for photodiodes of PIN、APD
SJ 2354.1-1983 General procedures of measurement for electrical and optical parameters of PIN and avalanche photodiodes
SJ 2214.4-1982 Method of measurement for reverse break-down voltage of semiconductor photodiodes
SJ 2354.6-1983 Method of measurement for responsivity of PIN and avalanche photodiodes
SJ 1389-1978 Methods of measurement for diodes leakage current between electrodes of noise-generator diodes
SJ/T 11399-2009 Measurement methods for chips of light emitting diodes
SJ 20785-2000 Measuring methods for super luminescent diode module
SJ 2138-1982 Methods of measurement for regulated current of silicon current regulator diodes
SJ 2354.9-1983 Method of measurement for noise equivalent power of PIN and avalanche photodiodes
SJ/T 11281-2017 Measure methods of light emitting diode (LED) displays
SJ 2141-1982 Methods of measurement for breakdown voltage of silicon currenet regulator diodes
SJ 1386-1978 Measurement conditions for noise-generator diodes and gas discharge noise tubes
SJ 2214.3-1982 Method of measurement for dark current of semiconductor photodiodes
SJ 2215.3-1982 Method of measurement for forward current of semiconductor photocouplers (diodes)

Professional Standard - Machinery

JB/T 10875-2008 Measuring methods for optical proerties of LEDs
JB/T 7624-2013 Testing Methods for Rectifier Diodes

Jiangxi Provincial Standard of the People's Republic of China

DB36/T 579-2010 LED(Light emitting diode)Road light

Professional Standard - Post and Telecommunication

YD/T 835-1996 Test Method of Avalanche Photodiodes
YD/T 701-1993 Test Method for Semiconductor Laser Diode Assembly
YD/T 0835-1996 Avalanche photodiode detection method

Taiwan Provincial Standard of the People's Republic of China

CNS 13649-1996 Reliability Testing for Laser Diode(for Communication)
CNS 14557-2001 Method of reliability test for road traffic LED display panel
CNS 13652-1996 Reliability Testing for Light Emitting Diode(for Communication)
CNS 14550-2001 Functions and properties testing for LED road lane control signal light modules (→CNS14546)
CNS 14547-2001 Functions and properties testing for LED road vehicle traffic control signal light modules (→CNS 14546)
CNS 13655-1996 Reliability Testing for Photodiode(for Communication)
CNS 14551-2001 Method of reliability test for LED road lane control signal light modules (→CNS 14546)
CNS 14548-2001 Method of reliability test for LED road vehicle traffic control signal light modules (→CNS14546)
CNS 5764-1980 Voltage Regulator Diode Noise Voltage Measurement

Group Standards of the People's Republic of China

T/CSA 015-2012 Organic light emitting diode (OLED) lighting—Measuring methods
T/QGCML 3251-2024 Light-emitting diode thermal impedance test method
T/CVIA 11-2016 Organic Light Emitting Diode (OLED) TV Measurement Methods
T/CVIA 59-2016 Organic Light Emitting Diode (OLED) TV Measurement Methods
T/CSA 047-2019 Measurement Method for Real Thermal Resistance and Impedance of Light Emitting Diodes

Fujian Provincial Standard of the People's Republic of China

DB35/T 1176-2011 Power LEDs for road lighting

National Metrological Verification Regulations of the People's Republic of China

JJG(电子) 04013-1988 BJ2912 (QE7) Zener diode tester trial verification regulations

未注明发布机构

JEDEC JESD24-7-2002 Commutating Diode Safe Operating Area Test Procedure for Measuring DV/DT During Reverse Recovery of Power Transistors

Danish Standards Foundation

DANSK DS/IEC TS 62916:2017 Photovoltaic modules – Bypass diode electrostatic discharge susceptibility testing
DANSK DS/EN 62979:2017 Photovoltaic module – Bypass diode – Thermal runaway test
DS/IEC 747-3-2:1987 Semiconductor devices. Discrete devices. Part 3: Signal (including switching) and regulator diodes. Section 2: Blank detail specification for voltage regulator diodes and voltage reference diodes, excluding temperature compensated precision refere di

Bureau of Indian Standards

IS/IEC/TS 62916-2017 Photovoltaic Modules — Bypass Diode Electrostatic Discharge Susceptibility Testing
IS/IEC 62979-2017 Photovoltaic Modules — Bypass Diode — Thermal Runaway Test

British Standards Institution (BSI)

PD IEC/TS 62916:2017 Photovoltaic modules. Bypass diode electrostatic discharge susceptibility testing
BS PD IEC/TS 62916:2017 Photovoltaic modules. Bypass diode electrostatic discharge susceptibility testing
BS EN 62979:2017 Photovoltaic modules. Bypass diode. Thermal runaway test (IEC 2979:2017)
BS IEC 60747-5-8:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of optoelectronic efficiencies of light emitting diodes
BS IEC 60747-5-11:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of radiative and nonradiative currents of light emitting diodes
BS IEC 60747-5-16:2023 Semiconductor devices - Optoelectronic devices. Light emitting diodes. Test method of the flat-band voltage of GaN-based light emitting diodes based on the photocurrent spectroscopy
18/30367363 DC BS IEC 60747-5-8. Semiconductor devices. Part 5-8. Optoelectronic devices. Light emitting diodes. Test method of optoelectronic efficiencies of light emitting diodes
24/30490678 DC BS IEC 60747-5-18 Semiconductor devices - Part 5-18: Optoelectronic devices - Light emitting diodes - Test method light emitting diodesof the macro photoluminescence for epitaxial wafers of micro light emitting diodes
BS IEC 60747-3:2013 Semiconductor devices. Discrete devices: Signal, switching and regulator diodes

GCC Standardization Organization

GSO IEC TS 62916:2021 Photovoltaic modules - Bypass diode electrostatic discharge susceptibility testing
GSO IEC 62979:2021 Photovoltaic modules - Bypass diode - Thermal runaway test
GSO IEC 62088:2014 Nuclear instrumentation - Photodiodes for scintillation detectors - Test procedures

International Electrotechnical Commission (IEC)

IEC 62979:2017 Photovoltaic modules - Bypass diode - Thermal runaway test
IEC TS 62916:2017 Photovoltaic modules - Bypass diode electrostatic discharge susceptibility testing
IEC 91/928/PAS:2010 Test methods for electronic circuit board for high-brightness LEDs
IEC 91/926/PAS:2010 Electronic circuit board for high-brightness LEDs
IEC 62088:2001 Nuclear Instrumentation - Photodiodes for Scintillation Detectors - Test Procedures (Edition 1.0)
IEC 60747-3-2:1986 Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference d
IEC 60747-3-1:1986 Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section One: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
IEC 60747-5-8:2019 Semiconductor devices - Part 5-8: Optoelectronic devices - Light emitting diodes - Test method of optoelectronic efficiencies of light emitting diodes

Kingdom of Bahrain Testing and Metrology Directorate

BH GSO IEC 62979:2022 Photovoltaic modules - Bypass diode - Thermal runaway test
BH GSO IEC 62088:2016 Nuclear instrumentation - Photodiodes for scintillation detectors - Test procedures

Association Francaise de Normalisation

NF C57-379*NF EN 62979:2017 Photovoltaic module - Bypass diode - Thermal runaway test
NF EN 62979:2017 Photovoltaic modules - Bypass diode - Thermal runaway test
NF EN 120001:1992 Particular framework specification: light-emitting diodes, light-emitting diode arrays, light-emitting diode displays without resistance or internal logic circuits
NF EN 120005:1992 Special frame specification: photodiodes, photodiode arrays (Not intended for optical fiber applications}

Spanish Association for Standardization (UNE)

UNE-EN 62979:2017 Photovoltaic module - Bypass diode - Thermal runaway test (Endorsed by Asociación Española de Normalización in October of 2018.)
UNE-EN 120005:1992 BDS: PHOTODIODES, PHOTODIODE ARRAYS (NOT INTENDED FOR FIBRE OPTIC APPLICATIONS). (Endorsed by AENOR in September of 1996.)
UNE-EN 120001:1992 BDS: LIGHT EMITTING DIODES, LIGHT EMITTING DIODE ARRAYS, LIGHT EMITTING DIODE DISPLAYS WITHOUT INTERNAL LOGIC AND RESISTOR. (Endorsed by AENOR in September of 1996.)

European Committee for Electrotechnical Standardization（CENELEC）

EN 62979:2017 Photovoltaic module - Bypass diode - Thermal runaway test

IEC - International Electrotechnical Commission

TS 62916-2017 Photovoltaic modules – Bypass diode electrostatic discharge susceptibility testing (Edition 1.0)

Comitato Elettrotecnico Italiano

CEI EN 62979:2018 Photovoltaic module - Bypass diode - Thermal runaway test

U.S. Military Regulations and Norms

ARMY MIL-C-48487 C-1995 CIRCUIT CARD ASSEMBLY - LAMP DIODES
ARMY MIL-C-48487 C NOTICE 3-1997 CIRCUIT CARD ASSEMBLY - LAMP DIODES
ARMY MIL-C-48487 C REINST NOTICE 2-1996 CIRCUIT CARD ASSEMBLY - LAMP DIODES
ARMY MIL-C-50241-1969 CABLE ASSEMBLIES AND SHORTING PLUGS, MONITOR FOR TFD
ARMY MIL-N-63400 (2)-1988 NETWORKS, CAPACITOR-RESISTOR
ARMY MIL-N-63400 NOTICE 1-1997 NETWORKS, CAPACITOR-RESISTOR

PL-PKN

PN T04812-1971 Information Processing USB Interface Standards
PN T01504-67-1987 Diodes Measuring methods Series equivalent resistance
PN T01504-61-1987 Information Processing Mobile Device Interfaces Requirements
PN T04804-1967 Low-power electron tubes Vacuum rectifier tubes General electrical testing methods

German Institute for Standardization

DIN EN 62979:2018 Photovoltaic module - Bypass diode - Thermal runaway test (IEC 62979:2017); German version EN 62979:2017
DIN IEC /TS 62916 E:2016 Draft Document - Bypass diode electrostatic discharge susceptibility testing for photovoltaic modules (IEC 82/932/CD:2015)
DIN IEC /TS 62916 E:2016-03 Draft Document - Bypass diode electrostatic discharge susceptibility testing for photovoltaic modules (IEC 82/932/CD:2015)
DIN IEC 62088:2002-09 Nuclear instrumentation - Photodiodes for scintillation detectors - Test procedures (IEC 62088:2001)
DIN EN 62979 E:2016 Draft Document - Photovoltaic module bypass diode thermal runaway test (IEC 82/1025/CD:2015)
DIN EN 62979 E:2016-04 Draft Document - Photovoltaic module bypass diode thermal runaway test (IEC 82/1025/CD:2015)
DIN EN 120005:1996 Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications); German version EN 120005:1992

Korean Agency for Technology and Standards (KATS)

KS C 6991-2013 TEST METHODS OF PHOTODIODES FOR FIBER OPTIC TRANSMISSION
KS C 6991-2001 Test methods of photodiodes for fiber optic transmission
KS C 6045-1991(2001) TESTING METHODS FOR SEMICONDUCTOR RECTIFIER DIODES
KS C 6045-1986 TESTING METHODS FOR SEMICONDUCTOR RECTIFIER DIODES
KS C 6991-2001(2011) TEST METHODS OF PHOTODIODES FOR FIBER OPTIC TRANSMISSION
KS C 6906-2001 Test methods of laser diodes for fiber optic transmission
KS C 6045-2002 TESTING METHODS FOR SEMICONDUCTOR RECTIFIER DIODES
KS C 5205-2002 RELIABILITY ASSURED VOLTAGE REGULATOR DIODES AND VOLTAGE REFERENCE DIODES
KS C IEC 60747-3-2:2006 Semiconductor devices － Discrete devices － Part 3: Signal (including switching) and regulator diodes － Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference
KS C IEC 60747-3-1:2006 Semiconductor devices － Discrete devices － Part 3: Signal (including switching) and regulator diodes － Section one: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
KS C 5301-1992(2017) Test methods of light emitting diodes for fiber optic transmission
KS C 6906-2001(2016) Test methods of laser diodes for fiber optic transmission
KS C 6906-2021 Test methods of laser diodes for fiber optic transmission
KS C 5301-2022 Test methods of light emitting diodes for fiber optic transmission

CZ-CSN

CSN 35 8736-1964 Semiconductor diodes. Measurement of interelectrode capacitanoe
CSN 35 8732-1964 Semiconductor diodes. Measurement of forward current
CSN 35 8786-1983 Varicaps. Electric parameter measurement methods
CSN 35 8734-1975 Semieonductor devices. Diodcs. Measurement of reverse current.
CSN 35 8761-1973 Semiconductor devices. Phototransistors photodíodes. Measurement of photoelectric current

Swedish Institute for Standards

SS-EN 62979:2018 Photovoltaic modules - Bypass diode - Thermal runaway test

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association

JEDEC JESD211-2009 Zener and Voltage Regulator Diode Rating Verification and Characterization Testing
JEDEC JESD307-1992 Voltage Regulator Diode Noise Voltage Measurement

RO-ASRO

STAS 7128/7-1986 LETTER SYMBOLS FOR SEMICONDUCTOR DEVICES AND INTEGRATED C1RCUITS Symbols for variable capacitance diodes and mixer diodes
STAS 12123/3-1983 Semiconductor devices VOLTAGE REFERENCE DIODES AND VOLTAGE REGULATOR DIODES Measuring methodes for electrical characteristics

Institute of Electrical and Electronics Engineers (IEEE)

IEEE C62.37-1996 Standard Test Specification for Thyristor Diode Surge Protective Devices
IEEE No 256-1963 IEEE Test Procedure for Semiconductor Diodes

American Society for Testing and Materials (ASTM)

ASTM F769M-95 Test method for measuring leakage current of transistors and diodes (metric)
ASTM F769-00 Standard Test Method for Measuring Transistor and Diode Leakage Currents (Withdrawn 2006)

Defense Logistics Agency

DLA SMD-5962-96843 REV D-2008 MICROCIRCUIT, LINEAR, VOLTAGE REFERENCE DIODE, 1.2 VOLTS, MONOLITHIC SILICON

Magyar Szabványügyi Testület

MSZ 11453/2-1987 Direct connection to tools and integrated circuits. Rectify the definition of diode detection

Gosstandart of Russia

GOST 18986.10-1974 Semiconductor diodes. Methods for measuring inductance
GOST 18986.4-1973 Semiconductor diodes. Methods for measuring capacitance
GOST 21011.2-1976 High-voltage kenotrons. The anode current measurement method within the voltage pulse
GOST 18986.6-1973 Semiconductor diodes. Method for measuring recovery charge
GOST 18986.24-1983 Semiconductor diodes. Measurement method of breakdown voltage

IECQ - IEC: Quality Assessment System for Electronic Components

QC 750101/SU 0004-1990 Detail Specification for Electronic Components Semiconductor Diodes@ Ambient-Rated Designated for Circuits in TV Receivers Switching Diodes (Sw)@ Type KD805A