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GB/T 33922-2017 in English

GB/T 33922-2017 in English

VALID

Wafer level test methods for MEMS piezoresistive pressure-sensitive die performances

  • Issued on:2017-07-12
  • Implemented on:2018-02-01
  • File Format:PDF
  • Delivery:Via email within 1~3 business days
Price(USD): $180.00
$175.00
Standard No: GB/T 33922-2017
Document status: VALID
Title in English: Wafer level test methods for MEMS piezoresistive pressure-sensitive die performances
Title in Chinese: MEMS压阻式压力敏感芯片性能的圆片级试验方法
Language: English
File Format: Electronic (PDF)
Delivery: Via email within 1~3 business days
Issued on: 2017-07-12
Implemented on: 2018-02-01
ICS Classification: 31.200-Integrated circuits. Microelectronics
Chinese Classification: L55-Microcircuit in general
Professional Classification: GB-National Standard
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《GB/T 33922-2017MEMS压阻式压力敏感芯片性能的圆片级试验方法》由TC336(全国微机电技术标准化技术委员会)归口,主管部门为国家标准化管理委员会。


Introduction

1. Standard Overview

GB/T 33922—2017 is a standard for wafer-level test methods for MEMS (micro-electromechanical systems) piezoresistive pressure-sensitive chips, which mainly involves the terminology definition, test conditions, static performance test and temperature performance test of the chip.

2. Technical Interpretation and Specifications

Technical Requirements Closed-Loop Piezoresistive Chip Open-Loop Piezoresistive Chip
Resistance Test Paired Arm Resistance Single Bridge Arm Resistance
Output Characteristics Closed Structure Bridge Open Structure Bridge
Sensitivity Calculation b Value (Slope) Based on Least Squares Fitting

3. Experimental conditions and methods

3.1 Experimental preparation

Under standard atmospheric conditions (temperature: $15~^{\circ}C\sim35~^{\circ}C$, relative humidity: $20\%\sim80\%$), fix the pressure sensitive chip on the probe station and ensure reliable connection between the probe and the pad.

3.2 Resistance test

For closed-loop chips, test the arm resistance; for open-loop chips, test the single bridge arm resistance. The test results must meet the measurement instrument error requirements (the basic error is less than $1/3$ of the chip error limit).

3.3 Static performance test

  • Perform positive and reverse stroke tests within the full range, with no less than 6 test points.
  • Calculate the average and total average of the forward and reverse strokes of each test point, and fit the working straight line equation ($Y=a+bX$).

4. Temperature performance analysis

Perform zero output and full-scale output tests at room temperature, upper limit working temperature and lower limit working temperature respectively, and calculate indicators such as thermal zero drift ($\alpha$) and thermal sensitivity drift ($\beta$).

5. Implementation suggestions

  1. Equipment calibration:Ensure that each device in the test system (such as probe station, pressure control device, temperature control device, etc.) has been calibrated within the validity period.
  2. Environmental control:Strictly control atmospheric conditions and electromagnetic interference during the test to avoid the influence of external factors on the test results.
  3. Data recording and analysis:Use professional software for data analysis to ensure that the calculation results meet the requirements of the formula and output a detailed report.

6. Summary

This standard provides comprehensive technical specifications and test methods for the performance test of MEMS piezoresistive pressure sensitive chips, which is of great significance to ensure product quality and technological progress. Compliance with this standard can effectively improve test accuracy and reliability.

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