Rated photodiode
Rated photodiode, Total:315 items.
The international standard classification for "Rated photodiode" includes: Optoelectronics. Laser equipment , Diodes , Nuclear energy in general , Other semiconductor devices , Television receivers , Solar energy engineering , Glass products .
The Chinese standard classification for "Rated photodiode" includes: Semiconductor emitting device , Technical management , Technical management , Technical management , Special electronic technology material , Microwave and millimeter wave diode and triode , Optical communication equipment , Power semiconductor device and parts , Semiconductor rectifier devices , Nuclear detector , Broadcasting and television transmission and receiving equipment , Solar energy , Industrial technical glass .
Professional Standard - Military and Civilian Products
- WJ 2506-1998 Verification Regulations for Photodiode Dynamic Tester
- WJ 2265-1995 Specifications for Preamplified Silicon Avalanche Photodiodes
- WJ 2100-2004 Test method for silicon photodiodes and silicon avalanche photodiodes
机械电子工业部
- JB 5837-1991 ZP series case rated rectifier diodes above 2000A
未注明发布机构
- ANSI C78.52-2017 Electric Lamps— LED (Light Emitting Diode) Direct Replacement Lamps — Method of Designation
- ANSI C78.51-2016 Electric Lamps — LED (Light Emitting Diode) Lamps — Method of Designation
- ANSI C82.16-2015 Light-Emitting Diode Drivers — Methods of Measurement
Professional Standard - Machinery
- JB/T 5837-1991 ZP Series 2000A and above Case - Rated Rectifier Diodes
- JB/T 5836-1991 ZK Series 5A and Above Case-rated Fast Recovery Rectifier Diodes
- JB/T 5186-1991 Silicon photodiodes for cameras
- JB/T 10875-2008 Measuring methods for optical proerties of LEDs
Professional Standard - Electron
- SJ/T 11403-2009 Laser diode modules used for telecommunication - Reliability assessment
- SJ 2354.13-1983 Method of measurement for multiplication factor of PIN and avalanche photodiodes
- SJ 2354.5-1983 Method of measurement for capacitance of PIN and avalanche photodiodes
- SJ 2354.2-1983 Method of measurement for reverse break-down voltage of PIN and avalanche photodiodes
- SJ/T 11470-2014 Epitaxial wafers of light-emitting diodes
- SJ 2354.3-1983 Method of measurement for dark current of PIN and avalanche photodiodes
- SJ 2214.5-1982 Method of measurement for junction capacitance of semiconductor photodiodes
- SJ/T 11393-2009 Semiconductor optoelectronic devices - Blank detail specification for power light-emitting diodes
- SJ/T 10953-1996 Detailed specifications for electronic components - 2CZ324Q ambient-rated silicon rectifier diodes (Applicable for certification)
- SJ 20644.2-2001 Semiconductor optoelectronic devices Detail specification for type GD101 PIN photodiode
- SJ/T 10058-1991 Detail specification for electronic components-Ambient rated silicon rectifier diode,Type 2CZ103
- SJ/T 10056-1991 Detail specification for electronic components-Case rated silicon rectifier diode,Type 2CZ59
- SJ 20644.1-2001 Semiconductor optoelectronic devices Detail specification for type GD3550Y PIN photodiode
- SJ 2749-1987 Method of measurement for semiconductor laser diodes
- SJ 50033/112-1996 Semiconductor optoelectronic devices-Detail specification for Type GD3251Y photodiodes
- SJ/T 11397-2009 Phosphors for light emitting diodes
- SJ 50033/102-1995 Detail specification for InGaAs/InP PIN photodiode for Type GD218
- SJ 2218-1982 Semiconductor photocouplers in the diode mode
- SJ 50033/113-1996 Semiconductor optoelectronic devices - Detail specification for Type GD3252Y photodiodes
- SJ/T 2354-2015 Measuring methods for photodiodes of PIN、APD
- SJ/T 10952-1996 Detailed specifications for electronic components - 2CZ323 ambient-rated silicon rectifier diodes (Applicable for certification)
- SJ 50033/139-1998 Semiconductor optoelectronic devices-Detail specification for green light-emitting diode for Type GF4111
- SJ 50033/57-1995 Semiconductor optoelectronic device Detail specification for red light emitting diode for type GF115
- SJ 2354.6-1983 Method of measurement for responsivity of PIN and avalanche photodiodes
- SJ/T 10055-1991 Detail specification for electronic components - Case rated silicon rectifier diode,Type 2CZ58
- SJ 50033/136-1997 Semiconductor discrete devices - Detail specification for red light emitting diode for Type GF116
- SJ 2216-1982 Silicon photodiodes
- SJ 2214.3-1982 Method of measurement for dark current of semiconductor photodiodes
- SJ/T 10054-1991 Detail specification for electronic components - Case rated silicon rectifier diode for Type 2CZ57
- SJ 2354.10-1983 Method of measurement for cross-light factor of PIN and avalanche photodiodes matrix
- SJ/T 10949-1996 Detailed specifications for electronic components - 2CZ321 ambient-rated silicon rectifier diodes (Applicable for certification)
- SJ/T 2354-2015/0352 Measuring methods for photodiodes of PIN、APD
- SJ/T 10951-1996 Detailed specifications for electronic components - 2CZ33 ambient-rated silicon rectifier diodes (Applicable for certification)
- SJ 2214.10-1982 Method of measurement for light current of semiconductor photodiodes and phototransistors
- SJ 50033/138-1998 Semiconductor optoelectronic devices - Detail specification for yellow light-emitting diode for Type GF318
- SJ/T 11471-2014 Measurement methods for epitaxial wafers of light-emitting diodes
- SJ/T 2216-2015 Technical specification for photodiode of silicon
- SJ/T 10950-1996 Detailed specifications for electronic components - 2CZ322 ambient-rated silicon rectifier diodes (Applicable for certification)
- SJ 50033/143-1999 Semiconductor optoelectronic devices - Detail specification for Type GF1120 red emitting diode
- SJ/T 10057-1991 Detail specification for electronic components - Case rated silicon rectifier diode,Type 2CZ60
- SJ/T 10060-1991 Detail specification for electronic components-Ambient rated silicon rectifier diode,Type 2CZ117
- SJ/T 2214-2015 Measuring methods for semiconductor photodiode and phototransistor
- SJ 2354.4-1983 Method of measurement for forward voltage drop of PIN and avalanche photodiodes
- SJ 2750-1987 Outline dimensions for semiconductor laser diodes
- SJ 50033/137-1997 Semiconductor discrete devices-Detail specification for orang-red light emitting diode for Type GF216
- SJ/T 10059-1991 Detail specification for electronic components-Ambient rated silicon rectifier diode,Type 2CZ116
- SJ 2354.1-1983 General procedures of measurement for electrical and optical parameters of PIN and avalanche photodiodes
工业和信息化部
- QB/T 5478-2020 LED-UV curing offset ink
- SJ/T 11461.2-2016 Organic light emitting diode displays- Part 2: Essential ratings and characteristics
- SJ/T 11624-2016 Specifications of LED devices for LED displays
- QC/T 1038-2016 Light-emitting diodes (LED) and modules for automotive
- SJ/T 2749-2016 Semiconductor Laser Diode Test Methods
邮电部
- YD/T 0835-1996 Avalanche photodiode detection method
Professional Standard - Post and Telecommunication
- YD/T 835-1996 Test Method of Avalanche Photodiodes
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
- GB/T 15651.6-2023 Semiconductor devices—Part 5-6: Optoelectronic devices—Light emitting diodes
- GB/T 23729-2009 Photodiodes for scintillation detectors - Test procedures
- GB/T 44292-2024 Electrostatic discharge susceptibility test for bypass diode applied in photovoltaic modules
- GB/T 6351-1998 Semiconductor devices--Discrete devices Part 2:Rectifier diodes Section One--Blank detail specification for rectifier diodes(including avalanche recti-fier diodes),ambient and case-rate
- GB/T 15651.7-2024 Semiconductor devices—Part 5-7: Optoelectronic devices—Photodiodes and phototransistors
- GB/T 16894-1997 Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100A
- GB 51209-2016 Code for design of light emitting diode plant
- GB/T 42243-2022 General technical specification for organic light emitting diode(OLED) television
Group Standards of the People's Republic of China
- T/CVIA 11-2016 Organic Light Emitting Diode (OLED) TV Measurement Methods
- T/ZZB 2332-2021 Polished sapphire substrate for LED
- T/QGCML 3251-2024 Light-emitting diode thermal impedance test method
- T/CSA 048-2019 Measurement of Electrical and Photometric Characteristics for General Lighting LEDs under Different Currents / Temperatures
- T/CSA 047-2019 Measurement Method for Real Thermal Resistance and Impedance of Light Emitting Diodes
- T/CVIA 58-2016 General Technical Requirements for Organic Light Emitting Diode (OLED) TVs
- T/COEMA 004LCD-2022 Polarizer film for the Organic Light-Emitting Diode TV Display
- T/CVIA 10-2016 General Technical Requirements for Organic Light Emitting Diode (OLED) TVs
- T/DZJN 210-2023 Light emitting diode (LED) intelligent all-in-one machine
- T/CEEIA 765-2023 Secondary circuits cables for airport navigation light of rated voltages 0.6/1 kV
- T/CVIA 59-2016 Organic Light Emitting Diode (OLED) TV Measurement Methods
Taiwan Provincial Standard of the People's Republic of China
- CNS 13810-1997 Lead Frames for Light Emitting Diodes
- CNS 11829-1987 Light Emitting Diodes (for Indication)
- CNS 13654-1996 Measuring Methods for Photodiode(for Communication)
- CNS 13651-1996 Measuring Methods for Light Emitting Diode(for Communication)
- CNS 13811-1997 Numerical-Type Reflectors for Light Emitting Diodes
- CNS 11830-1987 Measuring Methods for Light Emitting Diodes (for Indication)
- CNS 13808-1997 Epitaxial Wafers for Light Emitting Diodes
- CNS 13809-1997 Light Emitting Diode Dice
Jiangxi Provincial Standard of the People's Republic of China
- DB36/T 579-2010 LED(Light emitting diode)Road light
中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会
- GB/T 35846-2018 Lighting glass tube for light emitting diode
Fujian Provincial Standard of the People's Republic of China
- DB35/T 2107-2022 Ultraviolet light-emitting diode evaluation method
- DB35/T 1370-2013 Light-emitting diode chip point test method
- DB35/T 1176-2011 Power LEDs for road lighting
- DB35/T 1193-2011 Semiconductor LED chip
- DB35/T 1611-2016 COB Package White Light Emitting Diode Technical Specifications
Professional Standard - Urban Construction
- CJ/T 361-2011 Light emitting diode (LED) lamp used in waterscape
国家市场监督管理总局、中国国家标准化管理委员会
- GB/T 36613-2018 Probe test method for light emitting diode chips
Military Standard of the People's Republic of China-General Armament Department
- GJB 3519-1999 General Specification for Semiconductor Laser Diodes
Guangdong Provincial Standard of the People's Republic of China
- DB44/T 1630-2015 3528/5050 Encapsulated Chip LED
ES-UNE
- UNE-EN 120005:1992 BDS: PHOTODIODES, PHOTODIODE ARRAYS (NOT INTENDED FOR FIBRE OPTIC APPLICATIONS). (Endorsed by AENOR in September of 1996.)
- UNE-EN 120001:1992 BDS: LIGHT EMITTING DIODES, LIGHT EMITTING DIODE ARRAYS, LIGHT EMITTING DIODE DISPLAYS WITHOUT INTERNAL LOGIC AND RESISTOR. (Endorsed by AENOR in September of 1996.)
- UNE-EN 120006:1992 BDS: PIN-PHOTODIODES FOR FIBRE OPTIC APPLICATIONS. (Endorsed by AENOR in September of 1996.)
- UNE-EN 120008:1993 BDS: LIGHT EMITTING DIODES AND INFRARED EMITTING DIODES FOR FIBRE OPTIC SYSTEM OR SUB-SYSTEM. (Endorsed by AENOR in September of 1996.)
European Standard for Electrical and Electronic Components
- CECC 50 008- 004 Ambient Rated Rectifier Diode (En)
- CECC 50 008- 005 Ambient Rated Rectifier Diode (En)
- EN 120005:1992 Blank detail specification: photodiodes, photodiode-arrays (not intended for fibre optic applications)
- EN 120001:1992 Blank detail specification; light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
- CECC 50 008- 014 UTE C 86-818/014; Ambient Rated Rectifier Diodes (Fr)
- EN 120006:1992 Blank detail specification: PIN-photodiodes for fibre optic applications
- CECC 50 001- 059 ISSUE 2 BS CECC 50 001-059; Silicon Ambient Rated Switching Diode in Glass Encapsulation (En)
German Institute for Standardization
- DIN EN 120005:1996 Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications); German version EN 120005:1992
- DIN EN 120005:1996-11 Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications); German version EN 120005:1992
- DIN EN 120001:1993-06 Blank detail specification: light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor; German version EN 120001:1992
- DIN EN 120001:1993 Blank detail specification: light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor; German version EN 120001:1992
- DIN IEC 62088:2002-09 Nuclear instrumentation - Photodiodes for scintillation detectors - Test procedures (IEC 62088:2001)
(U.S.) Joint Electron Device Engineering Council Soild State Technology Association
- JEDEC JESD211-2009 Zener and Voltage Regulator Diode Rating Verification and Characterization Testing
Korean Agency for Technology and Standards (KATS)
- KS C 7103-2020 Organic Light Emitting Diode(OLED) display-Essential ratings and characteristics
- KS C 7103-2005(2020) Organic Light Emitting Diode(OLED) display-Essential ratings and characteristics
- KS C 7103-2005 Organic Light Emitting Diode(OLED) display-Essential ratings and characteristics
- KS C 6990-2001 General rules of photodiodes for fiber optic transmission
- KS C 6905-2001 General rules of laser diodes for fiber optic transmission
- KS C 6991-2001 Test methods of photodiodes for fiber optic transmission
- KS C IEC 60747-2-2-2021 Semiconductor devices-Discrete devices-Part 2:Rectifier diodes-Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
- KS C 6906-2001 Test methods of laser diodes for fiber optic transmission
- KS C 6991-2013 TEST METHODS OF PHOTODIODES FOR FIBER OPTIC TRANSMISSION
- KS C 6990-2013 GENERAL RULES OF PHOTODIODES FOR FIBER OPTIC TRANSMISSION
- KS C 7121-1990 Measuring Methods for Light Emitting Diodes (for Indication)
- KS C 6990-2001(2011) GENERAL RULES OF PHOTODIODES FOR FIBER OPTIC TRANSMISSION
- KS C 7120-1990 Light Emitting Diodes(for Indication)
- KS C 7120-2021 Light Emitting Diodes(for Indication)
- KS C 7120-1990(2016) Light Emitting Diodes(for Indication)
- KS C 5300-1992 General rules of light emitting diodes for fiber optic transmission
- KS C 7120-1990(2021) Light Emitting Diodes(for Indication)
- KS C 5300-1992(2022) General rules of light emitting diodes for fiber optic transmission
- KS C 5301-1992 Test methods of light emitting diodes for fiber optic transmission
- KS C 6905-2001(2021) General rules of laser diodes for fiber optic transmission
- KS C 6991-2001(2011) TEST METHODS OF PHOTODIODES FOR FIBER OPTIC TRANSMISSION
- KS C IEC 60747-2-2-2006(2021) Semiconductor devices-Discrete devices-Part 2:Rectifier diodes-Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for current
- KS C IEC 60747-2-2-2006(2016) Semiconductor devices-Discrete devices-Part 2:Rectifier diodes-Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for current
- KS C 7104-2020 Standard of measuring the performance of light emitting diodes
- KS C 6942-2014 General rule of laser diode modules for fiber optic transmission
- KS C 6942-2019 General rule of laser diode modules for fiber optic transmission
- KS C 5300-2022 General rules of light emitting diodes for fiber optic transmission
- KS C 6905-2021 General rules of laser diodes for fiber optic transmission
- KS C IEC 60747-2-1-2006(2021) Semiconductor devices-Discrete devices-Part 2:Rectifier diodes-Section one:Blank detail specification for rectifier diodes(including avalanche rectifier diodes),ambient and case-rated, up to 100 A
- KS C IEC 60747-2-1-2006(2016) Semiconductor devices-Discrete devices-Part 2:Rectifier diodes-Section one:Blank detail specification for rectifier diodes(including avalanche rectifier diodes),ambient and case-rated, up to 100 A
- KS C 6906-2021 Test methods of laser diodes for fiber optic transmission
- KS C 5301-1992(2022) Test methods of light emitting diodes for fiber optic transmission
- KS C 5205-2002 RELIABILITY ASSURED VOLTAGE REGULATOR DIODES AND VOLTAGE REFERENCE DIODES
- KS C 6906-2001(2021) Test methods of laser diodes for fiber optic transmission
- KS C 7121-1990(2021) Measuring Methods for Light Emitting Diodes (for Indication)
- KS C 5301-1992(2017) Test methods of light emitting diodes for fiber optic transmission
- KS C 6906-2001(2016) Test methods of laser diodes for fiber optic transmission
- KS C 5301-2022 Test methods of light emitting diodes for fiber optic transmission
Association Francaise de Normalisation
- NF EN 120005:1992 Special frame specification: photodiodes, photodiode arrays (Not intended for optical fiber applications}
- NF EN 120001:1992 Particular framework specification: light-emitting diodes, light-emitting diode arrays, light-emitting diode displays without resistance or internal logic circuits
- NF C93-120-005*NF EN 120005:1992 Blank detail specification : photodiodes, photodiode arrays (not intended for fibre optic applications)
- NF C93-120-001*NF EN 120001:1992 Blank detail specification : light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
- NF C96-551/A3:1981 Optoelectronic Light emitting diodes Optocouplers Relevant Article Sheets
- NF C96-551/A2:1981 Optoelectronic Light emitting diodes Optocouplers Relevant Article Sheets
- NF C86-502:1983 Harmonized system of quality assessment for electronic components. Blank detail specification. Infrared emitting diodes, infrared emitting diodes arrays.
- NF C93-872:1987 Digital receivers with pin photodiode.
- NF C86-501:1983 Harmonized system of quality assessment for electronic components. Blank detail specification. Light emitting diodes, light emitting diode arrays.
- NF C86-508:1993 Blank detail specification. Light emitting diodes and infrared emitting diodes for fibre optic system or sub-system.
- NF C86-505:1986 Semiconductor devices. Harmonized system of quality assessment for electronic components. Photodiodes. Photodiodes-arrays. Blank detail specification CECC 20 005.
- NF C93-871:1987 Digital transmitters with light emitting diodes.
SE-SIS
- SIS SS CECC 20005-1988 Blank detail specification: Photodiodes, photodiode-arrays (not intended for fibre optic aoolications)
- SIS SS-CECC 20001-1991 Blank detail specification: Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
- SIS SS-CECC 50009-1991 Blank detail specification:Case-rated rectifier diodes
- SIS SS-CECC 50008-1991 Blank detail specification: Ambient-rated rectifier diodes
- SIS SS CECC 20002-1984 Blank detail specification: Infrared emitting diodes, infrared emitting diode arrays
- SIS SS CECC 20006-1988 Blank detail specification: PIN-photodiodes for fibre optic applications
SCC
- DANSK DS/EN 120005:2016 Blank Detail Specification: Photodiodes, photodiode arrays (not intended for fibre optic applications)
- DANSK DS/EN 120001:2016 Blank Detail Specification: Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
- DIN EN 150009:1993 Blank detail specification: case-rated rectifier diodes; German version EN 150009:1991
- DIN EN 150008:1993 Blank detail specification: ambient-rated rectifier diodes; German version EN 150008:1992
- BS CECC 20001:1983 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: light emitting diodes, light emitting diode arrays
- ANSI C78.51-2016(R2022) American National Standard for Electric Lamps - LED (Light Emitting Diode) Lamps - Method of Designation
- CSA C865.1-2023 Pilotes de diodes électroluminescentes — méthodes de mesure
- CIE DIS 024/E:2013 Light Emitting Diodes (LEDs) and LED Assemblies - Terms and Definitions
- CIE DIS 024/E:2015 Light Emitting Diodes (LEDs) and LED Assemblies - Terms and Definitions
- DIN EN 120006:1996 Blank detail specification: PIN-photodiodes for fibre optic applications; German version EN 120006:1992
- DIN EN 120008:1995 Blank detail specification: Light emitting diodes and infrared emitting diodes for fibre optic system or sub-system; German version EN 120008:1993
- CSA C22.2 No.250.13-2020 Appareillages à diodes électroluminescentes (DEL) pour applications d’éclairage
- DANSK DS/IEC TS 62916:2017 Photovoltaic modules – Bypass diode electrostatic discharge susceptibility testing
- BS EN 150009:1993 Harmonized system of quality assessment for electronic components. Blank detail specification: case-rated rectifier diodes
- BS EN 150008:1993 Harmonized system of quality assessment for electronic components. Blank detail specification: ambient-rated rectifier diodes
- BS QC 750108:1990 Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A
- BS PD IEC TS 63109:2022 Photovoltaic (PV) modules and cells. Measurement of diode ideality factor by quantitative analysis of electroluminescence images
- MIL MIL-PRF-32243A-2019 Light Emitting Diode (LED) Military Driving Headlamp
- CSA C865.2-2023 Light-emitting diode drivers — Performance characteristics
- MIL MIL-PRF-49169B-1999 LIGHT-EMITTING DIODE ARRAY (SUPERSEDING MIL-L-49169A)
- MIL MIL-PRF-32243-2009 Light Emitting Diode (LED) Military Driving Headlamp
- BS EN 120008:1995 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: light emitting diodes and infrared emitting diodes for fibre optic system or sub-system
Lithuanian Standards Office
- LST EN 120005-2001 Blank detail specification. Photodiodes, photodiode-arrays (not intended for fibre optic applications)
- LST EN 120001-2001 Blank detail specification. Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
- LST EN 120002-2001 Blank detail specification. Infrared emitting diodes, infrared emitting diode arrays
British Standards Institution (BSI)
- BS IEC 60747-5-8:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of optoelectronic efficiencies of light emitting diodes
- BS EN 120005:1986 Specification for harmonized system of quality assessment for electronic components - Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications)
- BS EN 120001:1991 Harmonized system of quality assessment for electronic components - Blank detail specification - Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
- BS IEC 60747-5-11:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of radiative and nonradiative currents of light emitting diodes
- BS IEC 60747-5-16:2023 Semiconductor devices - Optoelectronic devices. Light emitting diodes. Test method of the flat-band voltage of GaN-based light emitting diodes based on the photocurrent spectroscopy
- BS EN 120001:1993 Harmonized system of quality assessment for electronic components. Blank detail specification. Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
- 24/30490678 DC BS IEC 60747-5-18 Semiconductor devices - Part 5-18: Optoelectronic devices - Light emitting diodes - Test method light emitting diodesof the macro photoluminescence for epitaxial wafers of micro light emitting diodes
- BS QC 750109:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
- 18/30367363 DC BS IEC 60747-5-8. Semiconductor devices. Part 5-8. Optoelectronic devices. Light emitting diodes. Test method of optoelectronic efficiencies of light emitting diodes
- BS EN 120005:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Photodiodes, photodiode-arrays (not intended for fibre optic applications)
- BS PD IEC/TS 62861:2017 Guidelines for principal component reliability testing for LED light sources and LED luminaires
- BS QC 750109:1994 Specification for harmonized system of quality assessment for electronic components - Blank detail specification - Rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
- BS PD IEC/TS 62916:2017 Photovoltaic modules. Bypass diode electrostatic discharge susceptibility testing
- 18/30388245 DC BS EN IEC 60747-5-11. Semiconductor devices. Part 5-11. Optoelectronic devices. Light emitting diodes. Test method of radiative and nonradiative currents of light emitting diodes
- BS CECC 50008:1992 Harmonized system of quality assessment for electronic components. Blank detail specification: ambient-rated rectifier diodes
- PD IEC/TS 62916:2017 Photovoltaic modules. Bypass diode electrostatic discharge susceptibility testing
- BS EN ISO 19009:2015 Small craft. Electric navigation lights. Performance of LED lights
- BS EN 120002:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: infrared emitting diodes, infrared emitting diode arrays
- PD IEC TS 63109:2022 Photovoltaic (PV) modules and cells. Measurement of diode ideality factor by quantitative analysis of electroluminescence images
International Electrotechnical Commission (IEC)
- IEC TS 62504:2011 General lighting - LEDs and LED modules - Terms and definitions
- IEC 60747-5-8:2019 Semiconductor devices - Part 5-8: Optoelectronic devices - Light emitting diodes - Test method of optoelectronic efficiencies of light emitting diodes
- IEC 91/926/PAS:2010 Electronic circuit board for high-brightness LEDs
- IEC 60747-5-16:2023 Semiconductor devices - Part 5-16: Optoelectronic devices - Light emitting diodes - Test method of the flat-band voltage of GaN-based light emitting diodes based on the photocurrent spectroscopy
- IEC 60747-5-7:2016 Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors
- IEC 60747-5-11:2019 Semiconductor devices - Part 5-11: Optoelectronic devices - Light emitting diodes - Test method of radiative and nonradiative currents of light emitting diodes
- IEC 60747-2-2:1993 Semiconductor devices; discrete devices; part 2: rectifier diodes; section 2: blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
- IEC 60747-2-1:1989 Semiconductor devices; discrete devices; part 2: rectifier diodes; section one: blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A
- IEC TS 62861:2017 Guidelines for principal component reliability testing for LED light sources and LED luminaires
- IEC TS 62916:2017 Photovoltaic modules - Bypass diode electrostatic discharge susceptibility testing
- IEC 60747-5-6:2021 Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
- IEC 60747-5-6:2016 Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
- IEC 62341-2-1:2015 Organic light emitting diode (OLED) displays - Part 2-1: Essential ratings and characteristics of OLED display modules
- IEC 91/928/PAS:2010 Test methods for electronic circuit board for high-brightness LEDs
- IEC 60747-5-6:2021 RLV Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
- IEC 60747-3-2:1986 Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference d
Japanese Industrial Standards Committee (JISC)
- JIS C 8152-2:2012 Photometry of white light emitting diode for general lighting -- Part 2: LED modules and LED light engines
- JIS C 5990:1997 General rules of photodiodes for fiber optic transmission
- JIS C 8152-1:2012 Photometry of white light emitting diode for general lighting -- Part 1: LED packages
- JIS C 8152-2 AMD 1:2014 Photometry of white light emitting diode for general lighting -- Part 2: LED modules and LED light engines (Amendment 1)
- JIS C 5991:1997 Measuring methods of photodiodes for fiber optic transmission
- JIS C 7036:1985 Measuring methods for light emitting diodes (for indication)
- JIS C 7035:1985 Light emitting diodes (for indication)
- JIS C 5950:1997 General rules of light emitting diodes for fiber optic transmission
- JIS C 5940:1997 General rules of laser diodes for fiber optic transmission
- JIS C 5942:1997 General rules of laser diodes used for recording and playback
- JIS C 5942:2010 General rules of laser diodes used for recording and playback
- JIS C 5941:1997 Measuring methods of laser diodes for fiber optic transmission
- JIS C 5951:1997 Measuring methods of light emitting diodes for fiber optic transmission
- JIS C 5943:1997 Measuring methods of laser diodes used for recording and playback
- JIS C 5943:2010 Measuring methods of laser diodes used for recording and playback
IECQ - IEC: Quality Assessment System for Electronic Components
- QC 750101/SU 0004-1990 Detail Specification for Electronic Components Semiconductor Diodes@ Ambient-Rated Designated for Circuits in TV Receivers Switching Diodes (Sw)@ Type KD805A
- QC 750101/GB 0001 ISSUE 1-1990 Silicon Ambient Rated High Speed Switching Diode in Plastic Encapsulation
- PQC 105-1992 Blank Detail Specification for Light Emitting Diodes@ Light Emitting Diode Arrays
- QC 750108/ CN 0008-1992 Detail Specification for Electronic Components Ambient- Rated Silicon Rectifier Diode for Type 2CZ317
- QC 750108/ CN 0006-1992 Detail Specification for Electronic Components Ambient-Rated Silicon Rectifier Diode for Type 2CZ312
- QC 750108/ CN 0007-1992 Detail Specification for Electronic Components Ambient-Rated Silicon Rectifier Diode for Type 2CZ313
- QC 750108/ CN 0005-1992 Detail Specification for Electronic Components Ambient-Rated Silicon Rectifier Diode for Type 2CZ308
- QC 750108/ CN 0010-1992 Detail Specification for Electronic Components Ambient- Rated Silicon Rectifier Diode for Type 2CZ305
- QC 750108/ CN 0009-1992 Detail Specification for Electronic Components Ambient- Rated Silicon Rectifier Diode for Type 2CZ318
- PQC 75-1991 Semiconductor Devices - Discrete Devices - Rectifier Diodes Blank Detail Specification: Rectifier Diodes (Including Avalanche Rectifier Diodes)@ Ambient and Case-Rated@ Greater Than 100 A
- QC 750108/ CN 0003-1991 Detail Specification for Electronic Components Ambient- Rated Silicon Rectifier Diode for Type 2CZ322 Assessment Level II
- QC 750108/ CN 0002-1991 Detail Specification for Electronic Components Ambient- Rated Silicon Rectifier Diode for Type 2CZ321 Assessment Level II
Japan Electronics and Information Technology Industries Association
- EIAJ ED 4910-1995 Light Emitting Diodes
JP-JEITA
- JEITA ED4912-2008 Light emitting diodes
YU-JUS
- JUS N.R1.372-1979 Semiconductor diodes. Essential ratmgs and characteristics: rectifier diodes
- JUS N.R1.375-1980 Semiconductor diode s. Essential ratings and characteristics. Variable capacitance diodes
- JUS N.R1.374-1980 Semiconductor diodes. Essentialratings and chdracteristics. Ttmneldiodes
- JUS N.R1.371-1979 Semiconductor diodes. Essential ratings and characteristics: Voltage reference and voltage regulator diodes
RU-GOST R
- GOST R 54814-2011 Light emitted diodes and light emitting diode modules for general application. Terms and definitions
- GOST R 54814-2018 Light emitted diodes and light emitting diode modules for general application. Terms and definitions
- GOST R 51106-1997 Lazers injection, lazer heads, lazers diodes matices, lazers diodes. Methods for measurement of parameters
- GOST 19656.6-1974 Semiconductor UHF mixer diodes. Measurement methods of standard overall noise figure
- GOST 18986.4-1973 Semiconductor diodes. Methods for measuring capacitance
IN-BIS
- IS 3700 Pt.11-1984 Basic ratings and characteristics of semiconductor devices Part 11 Light-emitting diodes
- IS 3700 Pt.9-1972 Basic Ratings and Characteristics of Semiconductor Devices Part IX Variable Capacitance Diodes
CZ-CSN
- CSN 35 8761-1973 Semiconductor devices. Phototransistors photodíodes. Measurement of photoelectric current
- CSN 35 8762-1973 Semiconductor devices. Phototransistors photodiodes. Measurement of dark current
- CSN 35 8775-1987 Light-emitting diodes. Noise measurement in forward direction
- CSN 29 3025-1955 Pipe fittings, light rated, pressure rated: to 150Jt
GOST
- GOST R 70998-2023 Injection lasers, laser heads, laser diodes matrices, laser diodes. Parameters system
U.S. Military Regulations and Norms
- ARMY MIL-PRF-49169B-1999 LIGHT-EMITTING DIODE ARRAY
- ARMY MIL-PRF-49169 B-1999 LIGHT-EMITTING DIODE ARRAY
- ARMY MIL-PRF-49169 B VALID NOTICE 1-2013 Light-Emitting Diode Array
- ARMY MIL-N-63400 (2)-1988 NETWORKS, CAPACITOR-RESISTOR
- ARMY MIL-N-63400 NOTICE 1-1997 NETWORKS, CAPACITOR-RESISTOR
PT-IPQ
- NP 3234-2-1987 Electronic originals. Electroluminescent diodes. Electroluminescent diode matrix, detailed specifications
NEMA - National Electrical Manufacturers Association
- NEMA C78.51-2016 Electric Lamps - LED (Light Emitting Diode) Lamps - Method of Designation
- NEMA C78.52-2017 Electric Lamps - LED (Light Emitting Diode) Direct Replacement Lamps - Method of Designation
GSO
- BH GSO IEC 60747-5-7:2022 Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors
- GSO IEC 60747-5-7:2021 Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors
- GSO IEC 60747-5-6:2021 Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
- GSO IEC TS 62916:2021 Photovoltaic modules - Bypass diode electrostatic discharge susceptibility testing
- BH GSO IEC 60747-5-6:2022 Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
- GSO IEC 62088:2014 Nuclear instrumentation - Photodiodes for scintillation detectors - Test procedures
International Commission on Illumination (CIE)
- CIE 127-1997 Measurement of LEDs
RO-ASRO
- STAS 12258/2-1984 Optoelectronic semiconductor devices PIIOTODIODES Terminology and essentia] characteristics
- STAS 12258/4-1986 Optoelectronic semiconductor devices LIGHT EMITTING DIODES Terminology and main characteristics
PL-PKN
- PN T01010 ArkusZ05-1974 Electronic tubes Vacuum diodes Terms and definitions
- PN T01504-67-1987 Diodes Measuring methods Series equivalent resistance
TH-TISI
- TIS 1596-1999 Semiconductor devices.discrete devices.part 2: rectifier diodes section 2: blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 a
Underwriters Laboratories (UL)
- UL 8752-2018 Organic light emitting diode (OLED) panels
- UL 8752-2012 Organic light emitting diode (OLED) panels
- UL 1598C-2017 UL Standard for Safety Light-Emitting Diode (LED) Retrofit Luminaire Conversion Kits
- UL 1598C-2014 UL Standard for Safety Light-Emitting Diode (LED) Retrofit Luminaire Conversion Kits (First Edition; Reprint with revisions through and including July 12@ 2017)
United States Navy
- NAVY A-A-59781-2005 LIGHT EMITTING DIODES FOR USE AS INDICATOR LIGHTS
Defense Logistics Agency
- DLA MIL-DTL-3976/1 B-2007 LIGHT EMITTING DIODE (LED), MARKER CLEARANCE-BLACKOUT, 14 AND 28 VOLT
Indonesia Standards
- SNI 7397-2008 LED (Light Emmiting Diode) signal lamps on the trains
TIA - Telecommunications Industry Association
- TIA-455-127-1991 FOTP-127 Spectral Characterization of Multimode Laser Diodes
CENELEC - European Committee for Electrotechnical Standardization
- EN 120008:1993 Blank Detail Specification: Light Emitting Diodes and Infrared Emitting Diodes for Fibre Optic System or Sub-System
(U.S.) Telecommunications Industries Association
- TIA-455-130-2007(2014) Elevated Temperature Life Test for Laser Diodes
- TIA-455-130-2001 Elevated Temperature Life Test for Laser Diodes
Society of Automotive Engineers (SAE)
- SAE ARP5873-2007 LED Passenger Reading Light Assembly
- SAE ARP6253-2011 LEDs and Aircraft Applications
SAE - SAE International
- SAE ARP6253A-2017 LEDs and Aircraft Applications
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